传感器与微系统2024,Vol.43Issue(10) :50-54.DOI:10.13873/J.1000-9787(2024)10-0050-05

圆片级封装中的二次硅-玻璃键合工艺研究

Research on bonding technology of D-SOG for wafer level packaging

郑雅欣 阮勇 祝连庆 宋志强 吴紫珏
传感器与微系统2024,Vol.43Issue(10) :50-54.DOI:10.13873/J.1000-9787(2024)10-0050-05

圆片级封装中的二次硅-玻璃键合工艺研究

Research on bonding technology of D-SOG for wafer level packaging

郑雅欣 1阮勇 2祝连庆 1宋志强 3吴紫珏1
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作者信息

  • 1. 北京信息科技大学仪器科学与光电工程学院,北京 100192
  • 2. 清华大学精密仪器系,北京 100084
  • 3. 淄博高新技术产业开发区MEMS研究院,山东淄博 255088
  • 折叠

摘要

针对MEMS谐振器真空封装更高的要求,将盖帽硅片、器件硅片(Si)和玻璃衬底通过二次Si—玻璃(D-SOG)阳极键合工艺,实现了MEMS谐振器加工的同时,完成MEMS谐振器的6in圆片级高真空度封装.通过优化两次键合工艺参数,第二次键合温度由第一次键合温度350℃调整到380℃,键合压力分别为800 N(第二次键合)和600 N(第一次键合);优化第二次键合封装密封环的键合面积宽度为700 μm;达到良好的MEMS谐振器封装效果,器件的泄漏速率为3.85×10-9 Pa·m3/s.该研究可以有效降低加工成本和工艺难度、提高器件可靠性,满足了MEMS器件对封装密封性的要求,后续可广泛应用到基于D-SOG的MEMS谐振器封装工艺中,具有良好的应用前景.

Abstract

Aiming at higher requirements of vacuum packaging of MEMS resonator,silicon cap,silicon device and glass substrate are processed by double silicon-on-glass (D-SOG)anodic bonding technology to realize the fabrication of MEMS resonators and the 6-inch wafer level high vacuum packaging of MEMS resonators. By optimizing the twice bonding process parameters,the second bonding temperature is adjusted from 350 ℃ to 380 ℃,and the bonding pressure is 800 N(the second bonding)and 600 N(the first bonding)respectively;bonding area width of the sealing ring for the second bonding package is optimized to be 700 μm;which achieves a good packaging effect of MEMS resonators,and the leakage rate of the device is 3. 85 ×10-9 Pa·m3/s. This research can effectively reduce the processing cost and process difficulty,improve the reliability of the device,and meet the requirements of MEMS devices for packaging sealing. Later,it can be widely used in the packaging process of MEMS resonators based on D-SOG,and has a good application prospect.

关键词

微机电系统/圆片级真空封装/玻璃上硅键合封装密封环/二次硅—玻璃键合

Key words

MEMS/wafer level vacuum packaging/sealing ring of silicon-on-glass bonding package/D-SOG bonding

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基金项目

国家自然科学基金资助项目(U21A6003)

出版年

2024
传感器与微系统
中国电子科技集团公司第四十九研究所

传感器与微系统

CSTPCD北大核心
影响因子:0.61
ISSN:1000-9787
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