Research on bonding technology of D-SOG for wafer level packaging
Aiming at higher requirements of vacuum packaging of MEMS resonator,silicon cap,silicon device and glass substrate are processed by double silicon-on-glass (D-SOG)anodic bonding technology to realize the fabrication of MEMS resonators and the 6-inch wafer level high vacuum packaging of MEMS resonators. By optimizing the twice bonding process parameters,the second bonding temperature is adjusted from 350 ℃ to 380 ℃,and the bonding pressure is 800 N(the second bonding)and 600 N(the first bonding)respectively;bonding area width of the sealing ring for the second bonding package is optimized to be 700 μm;which achieves a good packaging effect of MEMS resonators,and the leakage rate of the device is 3. 85 ×10-9 Pa·m3/s. This research can effectively reduce the processing cost and process difficulty,improve the reliability of the device,and meet the requirements of MEMS devices for packaging sealing. Later,it can be widely used in the packaging process of MEMS resonators based on D-SOG,and has a good application prospect.
MEMSwafer level vacuum packagingsealing ring of silicon-on-glass bonding packageD-SOG bonding
万方数据
维普
