Research progress of AlGaN/GaN HEMT sensing chips for biomolecular detection
AlGaN/GaN high eletron mobility transistor (HEMT )biosensor is a novel ion sensitive field effect transistor(ISFET)biosensor developed based on the 3rd generation semiconductor GaN. It works using modulating 2D electron gas(EG)with high electron mobility in a heterojunction channel when charge changes in the sensitive region of the device. Compared with traditional silicon-based ISFET,The AlGaN/GaN HEMT biochemical sensor has superior chemical stability,which makes it a larger application range. Based on the detection principle of AlGaN/GaN HEMT biosensor,this paper discusses the key issues of AlGaN/GaN HEMT biosensor from feasibility verification,performance optimization to practical detection,and summarizes and evaluates the research status and future development of AlGaN/GaN HEMT biosensor at home and abroad.
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维普
