传感器与微系统2024,Vol.43Issue(12) :28-31.DOI:10.13873/J.1000-9787(2024)12-0028-04

高精度MEMS差压传感器芯片的研究

Research on high-precision MEMS differential pressure sensor chip

杜成权 艾军 许明洋 魏壮壮 陈宇昕
传感器与微系统2024,Vol.43Issue(12) :28-31.DOI:10.13873/J.1000-9787(2024)12-0028-04

高精度MEMS差压传感器芯片的研究

Research on high-precision MEMS differential pressure sensor chip

杜成权 1艾军 1许明洋 1魏壮壮 1陈宇昕1
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作者信息

  • 1. 重庆金芯麦斯传感器技术有限公司,重庆401120
  • 折叠

摘要

为应对市场对高精度MEMS差压传感器的需求,开展了压力传感器芯片关键技术研究.设计了一种压阻式差压传感器芯片,解决了硅—硅室温键合技术难题,开发了自主可控、稳定可靠、适合批量生产的工艺.采用体微机械加工技术和硅—硅键合技术制备了压力芯片晶圆,形成了满足实际应用需求的高精度差压MEMS压力传感器芯片.本文制备的压阻式差压传感器芯片压力测量范围覆盖0~14 MPa,线性误差(>10 kPa)<0.3%FS,温度滞后性<±0.05%FS,压力滞后性<0.05%FS,工作温度-40~+85℃,过载能力≥2倍FS,为压阻式压力芯片的设计与制作提供了一种可行的参考方案.

Abstract

Key technology of pressure sensor chips are studied to satisfy the market demand for high-precision MEMS differential pressure sensors. In this study,a piezoresistive differential pressure sensor chip is designed,and the difficult problem of silicon-silicon direct bonding technology at room temperature is solved,and the stable and reliable processes suitable for mass production is developed. In the manufacturing process,bulk micromachining technology and silicon-silicon direct bonding technology are used. And high-precision differential pressure MEMS pressure sensor chips are prepared,which to meet practical application needs. Piezoresistive differential pressure sensor chips are prepared that with a pressure measurement range of 0~14 MPa,linearity error(>10 kPa)<0.3%FS,temperature hysteresis<±0.05%FS,pressure hysteresis<0.05%FS,working temperature is-40~+85℃,overload capacity ≥2 times FS. This research provides a feasible referred option for the design and production of piezoresistive pressure chips.

关键词

差压传感器/MEMS芯片/体微加工/KOH刻蚀/硅—硅键合

Key words

differential pressure sensor/MEMS chip/bulk micromachining/KOH etching/Si-Si direct bonding

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出版年

2024
传感器与微系统
中国电子科技集团公司第四十九研究所

传感器与微系统

CSTPCD北大核心
影响因子:0.61
ISSN:1000-9787
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