Gas-senstive effect research of quantum dot capacitor and design of sensor chip
Quantum dots featured by their small grain size,large specific surface area,and abundant surface active sites are the research frontier in the field of low-dimensional gas-sensitive materials. However,suffer from restriction of the quantum confinement effect,resistance of quantum dot thin films is usually high,practicality of gas sensors is often affected. Gas sensing material of lead sulfide quantum dots are taken as the research object at room temperature,and thin-film of quantum dots is prepared on ceramic substrate. The gas-sensitive effect of the thin-film resistor and capacitor are tested and analyzed,respectively. The research results show that the quantum dot thin-film capacitor also has gas sensitive effect to NO2 at room temperature. Based on this,a novel gas sensor chip structure is proposed,which fuses gas senstive effect of quantum dot capacitor with the transistor principle. Then,the planar capacitor of the quantum dot film is connected in series to form a gas-sensitive gate and is conducted simulation analysis. By utilizing the sensitive effect of quantum dot thin film capacitance changes with gas,the chemical interaction at the gas-solid interface can be converted into transistor channel current signals. This method has the features of high sensitivity,low power consumption,and high integration. The research results can provide a reference for the chips design and wafer-level manufacturing of semiconductor gas sensor.
semiconductor gas sensorfield-effect transistorcapacitancesimulationsensitive mechanism
万方数据
维普
