退火温度对HiPIMS沉积铂热电阻薄膜TCR系数的影响
Effect of Annealing Temperature on TCR Coefficient of Platinum Thermistor Films Deposited by HiPIMS
何晓韬 1罗筠龙 1潘子常 1王启民 1吴正涛1
作者信息
- 1. 广东工业大学机电工程学院,广东 广州 511400
- 折叠
摘要
传统直流磁控溅射(DC Magnetron Sputtering,DCMS)沉积金属薄膜时离化率较低,随着薄膜科学技术以及市场对薄膜材料质量的需求提高,对材料沉积时的离化率要求也更加高.高功率脉冲磁控溅射(High Power Impulse Magnetron Sputtering,HiPIMS)是一项能在沉积时提供高电离率的技术.文章采用HiPIMS技术制备铂薄膜,并比较了 HiPIMS不同脉宽和DCMS技术下沉积的铂薄膜的微观结构以及电学性能,然后在不同温度下退火处理进行比较分析.使用扫描电子显微镜(Scanning Electron Microscopy,SEM)、X射线衍射(X-Ray Diffraction,XRD)和油浴测试对铂薄膜的表截面形貌、晶体生长取向和电阻温度系数(Temperature Coefficient of Resistance,TCR)进行表征与测试.通过HiPIMS方法制备的铂薄膜退火后薄膜更加均匀、致密,缺陷更少,并且将150 μs脉宽下HiPIMS沉积的铂薄膜进行1 150 ℃的退火后,测得的TCR最大,TCR值达到3.872×10-3℃.
Abstract
The ionization rate of metal thin films deposited by traditional DC magnetron sputtering is low.With the increase of thin film science and technology and the market demand for the quality of thin film materials,the demand for the ionization rate of material deposition is also higher.High power pulsed magnetron sputtering(HiPIMS)is a technique that provides high ionization rates during deposition.Therefore,in the paper,HiPIMS technology was used to prepare Pt films,and the microstructure and electrical properties of platinum films deposited by HiPIMS under different pulse widths and DC magnetic control(DCMS)techniques were compared,then the annealing treatment at different temperatures was compared and analyzed.The surface section morphology,crystal growth orientation and TCR of platinum thin films were characterized by SEM,XRD and due test.The platinum film prepared by HiPIMS method is more uniform,dense and has fewer defects after annealing,and the platinum film deposited by HiPIMS with a pulse width of 150 μs is annealed at 1 150 ℃,and the measured TCR value reaches 3.872× 10-3 ℃.
关键词
HiPIMS/铂薄膜/热电阻/电阻温度系数Key words
HiPIMS/Pt film/thermal resistance/temperature coefficient of resistance引用本文复制引用
出版年
2024
NETL
NSTL
万方数据