Kinetic and Microstructure of SiC Deposited from SiCl4-CH4-H2
Silicon carbide was prepared from SiCl4-CH4-H2 gaseous precursors by isothermal, isobaric chemical vapor deposition (CVD) at atmospheric pressure and temperatures ranging from 900 C to 1100 C. Kinetic studies showed that carbosilane of SiH2Cl2, SiHCl3 and SiCI2 formed from decomposition of SiCI4 and CH4 contributed to the deposition of hexangular facet and granular pebble structured SiC. An average apparent activation energy of 152 ldmol ' was determined. The overall CVD process was controlled not only by the surface reactions but also by complex gas phase reactions. The as-deposited thin film was characterized using scanning electron microscopy, X-ray diffraction and transmission electron microscopy, these analysis showed that the deposited thin film consisted of pure phase of the β-SiC, the growth morphology of β-SiC differs from hexangular facet to granular pebble structures, which varied with substrate length and CVD temperature.
chemical vapor deposition, SiC, kinetics, microstructure
杨艳、张伟刚
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State Key Lab of Multi-phase Complex Systems, Institute of Process Engineering, CAS, Beijing 100190, China
Graduate University of Chinese Academy of Sciences, Beijing 100049, China
chemical vapor deposition, SiC, kinetics, microstructure
One Hundred Talents Program of Chinese Academy of Sciences
NETL
NSTL
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