高分子科学(英文版)2024,Vol.42Issue(1) :24-31.DOI:10.1007/s10118-023-3043-y

Thiazoloisoindigo-based Polymer Semiconductors:Synthesis,Structure-Property Relationship,Charge Carrier Polarity,and Field-Effect Transistor Performance

Bo-Wen Li Miao Xiong Mei-Hua Liu Zhi-Gao Li Long Sang Zi-Han Xiong Biao Xiao Jian Pei Xiao-Bo Wan
高分子科学(英文版)2024,Vol.42Issue(1) :24-31.DOI:10.1007/s10118-023-3043-y

Thiazoloisoindigo-based Polymer Semiconductors:Synthesis,Structure-Property Relationship,Charge Carrier Polarity,and Field-Effect Transistor Performance

Bo-Wen Li 1Miao Xiong 2Mei-Hua Liu 1Zhi-Gao Li 1Long Sang 1Zi-Han Xiong 1Biao Xiao 1Jian Pei 2Xiao-Bo Wan1
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作者信息

  • 1. Key Laboratory of Optoelectronic Chemical Materials and Devices,Ministry of Education,School of Optoelectronic Materials & Technology,Jianghan University,Wuhan 430056,China
  • 2. Beijing National Laboratory for Molecular Sciences,the Key Laboratory of Bioorganic Chemistry and Molecular Engineering of Ministry of Education,College of Chemistry and Molecular Engineering,Peking University,Beijing 100871,China
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Abstract

Developing new polymeric semiconductors with excellent device performance is essential for organic electronics.Herein,we synthesized two new thiazoloisoindigo(Tzll)-based polymers,namely,P(Tzll-dTh-dTh)and P(Tzll-dTh-dTz),by copolymerizing thiophene-flanked Tzll with bithiophene and bithiazole,respectively.Owing to the more electron-deficient nature of bithiazole than bithiophene,P(Tzll-dTh-dTz)possesses deeper LUMO/HOMO levels of-3.45/-5.47 eV than P(Tzll-dTh-dTh)(-3.34/-5.32 eV).The organic field-effect transistor(OFET)devices based on P(Tzll-dTh-dTh)exhibited p-type behaviors with an average hole mobility value as high as 1.43 cm2·V-1·s-1,while P(Tzll-dTh-dTz)showed typical ambipolar characteristics with average hole and electron mobilities of 0.38 and 0.56 cm2.V-1·s-1.In addition,we compared the performances of both polymers with other Tzll-based polymers reported in our previous work,and showed that the charge carrier polarity can be manipulated by adjusting the number of the thiophene units between the acceptor unit.As the increase of the number of thiophene rings,charge carrier polarity shifts from electron-dominated ambipolar transport to hole-dominated ambipolar transport and then to unipolar hole transport in OFETs,which provides an effective molecular design strategy for further optimization of polymer OFET performance.

Key words

Field-effect transistor/Charge carrier polarity/Thiazoloisoindigo

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基金项目

国家自然科学基金(22102086)

国家自然科学基金(22075105)

startup funding from Jianghan University()

出版年

2024
高分子科学(英文版)
中国化学会 中国科学院化学研究所

高分子科学(英文版)

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影响因子:0.721
ISSN:0256-7679
参考文献量1
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