首页|卤水表面附近盐岩结晶特征研究

卤水表面附近盐岩结晶特征研究

Study of Crystallization of Halite Near the Surface of Brine

扫码查看
[目的]为了弥补现代盐湖沉积考察中丢失的信息,获取盐岩动态结晶过程,指导古盐湖沉积研究.[方法]借助室内石盐蒸发实验,观察卤水蒸发过程中氯化钠结晶特征,分析石盐结晶与沉积环境之间的关系,为盐湖沉积模式建立提供参考.[结果与结论]石盐沉积位置受结晶习性影响,晶体可以在卤水界面之上沉积,其形成的动力除了蒸发泵作用外,还受空气湿度和石盐潮解共同控制;人字晶一般形成于漏斗晶基础之上,在发育空间受限时,绕不同漏斗晶核生长的纹层斜交后形成人字晶纹,两种晶型可以同时沉积于水面之上;盐湖干涸之前,可能经历岩层封锁水面的现象,并可能对临层的碎屑沉积物产生影响.
[Objective]In order to make up for the information lost in the investigation of modern salt lake deposits,obtain the dynamic crystallization process of halite and guide the study of ancient salt lake deposits.[Methods]With the help of indoor halite evaporation experiment,showing the crystallization characteristics of NaCl during brine evap-oration and the relationship between halite crystallization and sedimentary environment may be analyzed,so as to pro-vide reference for the establishment of salt lake sedimentary model.[Results and Conclusions]It was found that the location of halite deposition is affected by the crystallization habit,and the crystals are deposited above the brine in-terface.Together with the action of the evaporation pump,the formation dynamics are also influenced by air humidity and halite deliquescence.Chevron crystals are generally formed at the base of hopper crystals.When growth space is limited,the laminae grown around different hopper crystal nuclei cross obliquely to form chevron crystals,and the two crystalline fabrics are deposited on the water surface at the same time.Before a salt lake completely dries,it may experience the phenomenon of the salt layer blocking the water surface,and may affect the clastic sediment in the ad-jacent layer.

halitedifferent crystalline formcrystallization characteristicsbrine surfaceevaporation experiment

冯阵东、谭浩林、周永、史淑珍、吴伟、刘惟庆、魏国营

展开 >

河南理工大学安全科学与工程学院,河南焦作 454003

河南理工大学资源环境学院,河南焦作 454003

河南理工大学建筑与艺术设计学院,河南焦作 454003

石盐 不同晶形 结晶特征 卤水表面 蒸发实验

国家自然科学基金项目国家自然科学基金项目

4187211242002163

2024

沉积学报
中国矿物岩石地球化学学会沉积学专业委员会 中国地质学会沉积地质专业委员会 中国科学院地质与地球物理研究所兰州油气资源研究中心

沉积学报

CSTPCD北大核心
影响因子:1.54
ISSN:1000-0550
年,卷(期):2024.42(1)
  • 12