High-Throughput Thermodynamic Analysis of TaC Coatings by Chemical Vapor Deposition
For guiding the growth regulation of high-purity TaC coatings for semiconductor high-temperature furnace components,the high-throughput thermodynamic simulation calculation of TaC coating growth process was carried out by Thermo-calc software,and the effects of dep-osition temperature,pressure and precursor component ratio on raw material utilization efficiency and TaC coating purity were investigated.Sim-ulation results demonstrated that X(Ta)∶X(C)(Mole fraction ratio)determined the phase composition of the products,while X(H)∶X(C)defined the formation window of the high-purity TaC coating in the"TaCl5+C3H6+H2"system.When X(Ta)∶X(C)＜1,high-quality TaC coatings could be obtained,and the free carbon was the primary impurity in the coating,which could be eliminated by elevating hydrogen con-centration in the atmosphere.According to the simulation analysis results,the recommended reaction window was X(Ta)∶X(C)of 0.8～1.0 and X(H)∶X(C)≥400,the deposition temperature of 1 800～2 100 K and deposition pressure of 5 000～10 000 Pa.Under the above condi-tions,the high purity(＞99％)and high material utilization(＞99％)TaC coatings could be obtained.
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