Abstract
Solar-blind deep-ultraviolet (DUV) photodetectors based on Ga2O3 have attracted great attention due to their potential applications for many military and civil purposes.However,the development of device integration for optoelectronic system applications remains a huge challenge.Herein,we report a facile method for patterned-growth of high-quality β-Ga2O3 thin films,which are assembled into a photodetectors array comprising 8 × 8 device units.A representative detector exhibits outstanding photoresponse performance,in terms of an ultra-low dark current of～0.62 pA,a large Ilight/Idark ratio exceeding 104,a high responsivity of ～0.72 A W-1 and a decent specific detectivity of ～4.18 × 1011 Jones,upon 265 nm DUV illumination.What is more,the DUV/visible (250/400 nm) rejection ratio is as high as 103 with a sharp response cut-offwavelength at ～280 nm.Further optoelectronic analysis reveals that the photodetectors array has good uniformity and repeatability,endowing it the capability to serve as a reliable DUV light image sensor with a decent spatial resolution.These results suggest that the proposed technique offers an effective avenue for patterned growth of β-Ga2O3 thin films for multifunctional DUV optoelectronic applications.
基金项目
国家自然科学基金(NSFC)
国家自然科学基金(51902078)
国家自然科学基金(62074048)
中央高校基本科研业务费专项(PA2020GDKC0014)
中央高校基本科研业务费专项(JZ2020HGTB0051)
中央高校基本科研业务费专项(JZ2018HGXC0001)
安徽省自然科学基金(2008085MF205)
NETL
NSTL
万方数据