Abstract
Three-dimensional Dirac semimetal Cd3As2 has been considered as an excellent candidate for applica-tions of electronic devices owing to its ultrahigh mobility and air-stability.However,current researches are focused mainly on the use of gate-voltage to control its carrier transport tunability,while the manipulation of transport properties by element-doping is quite limited.Here we report the tunable magneto-transport properties by adjusting Mn-doping in the Cd3As2 compound.We find that Mn-element doping has a strong influence on the Fermi level positions,and the Fermi energy approaches to Dirac point with higher Mn-doping.More importantly,the introduction of Mn atoms transforms dia-magnetic Cd3As2 to antiferromagnetic(Cd,Mn)3As2,which provides an approach to control topological protected Dirac materials by manipulating antiferromagnetic order parameters.The Shubnikov-de Hass oscillation originates from the surface states,and the Landau fan diagram yields a nontrivial Berry phase,indicating the existence of massless Dirac fermions in the(Cd1-xMnx)3As2 compounds.Our present results may pave a way for further investigating antiferromagnetic topological Dirac semimetal and expand the potential applications in optoelectronics and spintronics.
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