首页|A flexible nickel phthalocyanine resistive random access memory with multi-level data storage capability

A flexible nickel phthalocyanine resistive random access memory with multi-level data storage capability

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Metal phthalocyanine is considered one of the most promising candidates for the design and fabrication of flexible resistive random access memory(RRAM)devices due to its intrinsic flexibility and excel-lent functionality.However,performance degradation and the lack of multi-level capability,which can directly expand the storage capacity in one memory cell without sacrificing additional layout area,are the primary obstacles to the use of metal phthalocyanine RRAMs in information storage.Here,a flex-ible RRAM with pristine nickel phthalocyanine(NiPc)as the resistive layer is reported for multi-level data storage.Due to its high trap-concentration,the charge transport behavior of the device agrees well with classical space charge limited conduction controlled by traps,leading to an excellent performance,including a high on-off current ratio of 107,a long-term retention of 106 s,a reproducible endurance over 6000 cycles,long-term flexibility at a bending strain of 0.6％,a write speed of 50 ns under sequential bias pulses and the capability of multi-level data storage with reliable retention and uniformity.

FlexibleMetal phthalocyanineResistive random access memoryMulti-level

Tariq Aziz、Yun Sun、Zu-Heng Wu、Mustafa Haider、Ting-Yu Qu、Azim Khan、Chao Zhen、Qi Liu、Hui-Ming Cheng、Dong-Ming Sun

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Shenyang National Laboratory for Materials Science,Institute of Metal Research,Chinese Academy of Sciences,72 Wenhua Road,Shenyang,110016,China

University of Chinese Academy of Sciences,19A Yuquan Road,Beijing,100049,China

School of Material Science and Engineering,University of Science and Technology of China,72 Wenhua Road,Shenyang,110016,China

Key Laboratory of Microelectronic Devices&Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,3 Bei-Tu-Cheng West Road,Beijing,100029,China

Pak-Austria Fachhochschule:Institute of Applied Sciences and Technology,Mang,Khanpur Road,Haripur,KPK,Pakistan

NUS Graduate School,Integrative Sciences and Engineering Programme,National University of Singapore,119077,Singapore

Frontier Institute of Chip and System,Fudan University,2005 Songhu Road,Shanghai 200433,China

Shenzhen Geim Graphene Center,Shenzhen International Graduate School,Tsinghua University,1001 Xueyuan Road,Shenzhen,518055,China

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This work was supported by National Natural Science Founda-tion of ChinaThis work was supported by National Natural Science Founda-tion of ChinaThis work was supported by National Natural Science Founda-tion of ChinaStrategic Priority Research Program of Chinese Academy of SciencesKey Research Program of Frontier Sci-ences of the Chinese Academy of SciencesLiaoning Revitalization Talents ProgramNational Key Research and Development Program of China

Nos.615741436170417551502304Grant XDB30000000ZDBS-LY-JSC027XLYC18071092016YFB0401104

2021

材料科学技术(英文版)
中国金属学会 中国材料研究学会 中国科学院金属研究所

材料科学技术(英文版)

CSTPCDCSCDSCI
影响因子：0.657
ISSN：1005-0302
年,卷(期)：2021.86(27)
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