Abstract
We demonstrate the first successful attempt to partially substitute Cu into the Mn3AgN-antiperovskite system to form Mn3Ag(1-x)Cu(x)N thin films with an ultra-low temperature coefficient of resistance(TCR)for fabrication of ultra-precise passive components.Films were grown by reactive magnetron sputtering on alumina and glass substrates and were found to be amorphous in nature with highly negative TCR of-233 to-351 ppm/℃in their as-grown state.Increasing Cu alloying from x=0 to 1,resulted in increased sheet resistance,a negative shift of TCR and a change of grain morphology from spherical to elongated.Post-deposition heat treatment at 300-375℃,resulted in a positive shift of TCR and an ultra-low TCR of-4.66 ppm/℃for films with x=0.6.The heat treatment induces grain growth,surface roughness and the formation of a manganese oxide upper surface layer up until temperatures of 350℃,after which surface oxidation begins to dominate.The growth rate of the surface layer is controlled by the Cu concentration and heat treatment temperature,which both play a central role in the development of these novel ultra-low TCR Mn3Ag(1-x)Cu(x)N thin film structures.
基金项目
collaborative partnership be-tween Northumbria University and TT Electronics PLC,Bedlington,UKTT Electronics PLC,Bedlington,UK s()
NETL
NSTL
万方数据