Abstract
Joining of ceramic and metal is a key component in microelectronic device manufacturing,in which the integrity of bonded interface is critical in the performance and stability of the devices.Current meth-ods with a problem of thick transition layer at the interface impeded heat flow,which degraded device service life seriously.Herein,we propose a laser-assisted bonding approach to join ceramic to metal di-rectly without any intermediate material.By focusing the laser on the surface of β-Si3N4 ceramic,the Si microcrystalline layer with stacked α-Si3N4 nanocrystals was prepared first.The face-centered cubic(fcc)Si and hexagonal close-packed(hcp)β-Si3N4 substrate take the coherent orientation relations of[001]fcc ‖[0001]hcp and(220)fcc‖(10(1)0)hcp.Then,the defect-free Si3N4/Cu bonded interface obtained by the reaction of the formed Si and Cu at elevated temperature in the 805-900℃range for 30 min demonstrated a strong and stable joining of ceramic to metal.The introduction of the laser provides a novel approach to join ceramics to metals,and the ceramic/metal component is expected to be a new configuration for package substrate in high-power device applications.
基金项目
National Natural Science Foun-dation of China(51875130)
National Natural Science Foun-dation of China(51775138)
Shandong Provincial Natural Science Foundation of China(ZR2019MEE091)
NETL
NSTL
万方数据