材料科学技术(英文版)2022，Vol.104Issue(9) ：1-7.

Enhanced ferroelectric polarization with less wake-up effect and improved endurance of Hf0.5Zr0.5O2 thin films by implementing W electrode

Dao Wang Yan Zhang Jiali Wang Chunlai Luo Ming Li Wentao Shuai Ruiqiang Tao Zhen Fan Deyang Chen Min Zeng Jiyan Y.Dai Xubing B.Lu J.-M.Liu
材料科学技术(英文版)2022，Vol.104Issue(9) ：1-7.
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Enhanced ferroelectric polarization with less wake-up effect and improved endurance of Hf0.5Zr0.5O2 thin films by implementing W electrode

Dao Wang 1Yan Zhang 1Jiali Wang 1Chunlai Luo 1Ming Li 1Wentao Shuai 1Ruiqiang Tao 1Zhen Fan 1Deyang Chen 2Min Zeng 1Jiyan Y.Dai 3Xubing B.Lu 1J.-M.Liu4
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作者信息

  • 1. Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials,South China Academy of Advanced Optoelectronics,South China Normal University,Guangzhou 510006,China
  • 2. Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials,South China Academy of Advanced Optoelectronics,South China Normal University,Guangzhou 510006,China;Department of Applied Physics,The Hong Kong Polytechnic University,Hung Hom,Kowloon,Hong Kong,China
  • 3. Department of Applied Physics,The Hong Kong Polytechnic University,Hung Hom,Kowloon,Hong Kong,China
  • 4. Laboratory of Solid State Microstructures and Innovation Centre of Advanced Microstructures,Nanjing University,Nanjing 210093,China
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Abstract

This paper reports the improvement of electrical,ferroelectric and endurance of Hf0.5Zr0.5O2(HZO)thin-film capacitors by implementing W electrode.The W/HZO/W capacitor shows excellent pristine 2Pr values of 45.1 μC/cm2 at±6 V,which are much higher than those of TiN/HZO/W(34.4 μC/cm2)and W/HZO/TiN(26.9 μC/cm2)capacitors.Notably,the maximum initial 2Pr value of W/HZO/W capacitor can reach as high as 57.9 μC/cm2 at±7.5 V.These strong ferroelectric polarization effects are ascribed to the W electrode with a fairly low thermal expansion coefficient which provides a larger in-plane tensile strain compared with TiN electrode,allowing for enhancement of o-phase formation.Moreover,the W/HZO/W capacitor also exhibits higher endurance,smaller wake-up effect(10.1％)and superior fatigue properties up to 1.5×1010cycles compared to the TiN/HZO/W and W/HZO/TiN capacitors.Such improvements of W/HZO/W capacitor are mainly due to the decreased leakage current by more than an order of magni-tude compared to the W/HZO/TiN capacitor.These results demonstrate that capping electrode material plays an important role in the enhancement of o-phase formation,reduces oxygen vacancies,mitigates wake-up effect and improves reliability.

Key words

Hf0.5Zr0.5O2 films/Ferroelectric polarization/Endurance properties/Thermal expansion coefficient/W electrode

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基金项目

National Nat-ural Science Foundation of China(51872099)

Hong Kong Research Grant Council(15300619)

Sci-ence and Technology Program of Guangzhou(201905-0001)

Guangdong Science and Technology Project-International Co-operation(2021A0505030064)

Hong Kong Scholars Program(XJ2019006)

出版年

2022
材料科学技术(英文版)
中国金属学会 中国材料研究学会 中国科学院金属研究所

材料科学技术(英文版)

CSTPCDCSCDSCI
影响因子：0.657
ISSN：1005-0302
参考文献量40
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