材料科学技术(英文版)2022,Vol.106Issue(11) :118-127.

Solid-state single-crystal growth of YAG and Nd∶ YAG by spark plasma sintering

Iva Milisavljevic Guangran Zhang Yiquan Wu
材料科学技术(英文版)2022,Vol.106Issue(11) :118-127.

Solid-state single-crystal growth of YAG and Nd∶ YAG by spark plasma sintering

Iva Milisavljevic 1Guangran Zhang 1Yiquan Wu1
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作者信息

  • 1. Kazuo Inamori School of Engineering,New York State College of Ceramics,Alfred University,Alfred,NY 14802,USA
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Abstract

Recent studies have shown that many challenges encountered in conventional single crystal growth meth-ods,including high production costs,can be overcome by using the solid-state single-crystal growth(SSCG)approach,which has been recognized as a simple and cost-effective alternative for obtaining sin-gle crystals.In this work,Y3Al5O12(YAG)and Nd3+-doped YAG(Nd∶YAG)single crystals were grown via the SSCG method using spark plasma sintering(SPS).The growth of single crystals was initiated at the surface of(110)YAG single-crystal seeds embedded inside YAG and Nd∶YAG powder beds,and this growth continued as the surrounding polycrystalline matrix was converted into a single crystal.The application of external pressure during the SPS process has been found beneficial for reducing the porosity of the grown single crystals.Moreover,high Nd3+doping levels had a positive effect on the conversion kinetics,with a growth rate of almost 50 pm/h,which increased the driving force for single-crystal growth through the solute drag effect.EDS elemental mapping and line scans confirmed the compositional uniformity of the grown single crystals,while EBSD images verified their crystallization in the(110)direction.The ob-tained results confirm the strong potential of the SSCG technique coupled with SPS for the growth of undoped and highly doped YAG single crystals with excellent quality.

Key words

Single-crystal growth/Solid-state growth/Spark plasma sintering/YAG

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基金项目

NSF grant(1554094forsupportingtheresearch)

出版年

2022
材料科学技术(英文版)
中国金属学会 中国材料研究学会 中国科学院金属研究所

材料科学技术(英文版)

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影响因子:0.657
ISSN:1005-0302
参考文献量44
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