Abstract
The investigation of two-dimensional(2D)materials has advanced into practical device applications,such as cascaded logic stages.However,incompatible electrical properties and inappropriate logic levels re-main enormous challenges.In this work,a doping-free strategy is investigated by top gated(TG)MoS2 field-effect transistors(FETs)using various metal gates(Au,Cu,Ag,and Al).These metals with different work functions provide a convenient tuning knob for controlling threshold voltage(Vth)for MoS2 FETs.For instance,the Al electrode can create an extra electron doping(n-doping)behavior in the MoS2 TG-FETs due to a dipole effect at the gate-dielectric interface.In this work,by achieving matched electrical properties for the load transistor and the driver transistor in an inverter circuit,we successfully demon-strate wafer-scale MoS2 inverter arrays with an optimized inverter switching threshold voltage(VM)of 1.5 V and a DC voltage gain of 27 at a supply voltage(VDD)of 3 V.This work offers a novel scheme for the fabrication of fully integrated multistage logic circuits based on wafer-scale MoS2 film.
基金项目
National Key Research and De-velopment Program(2016YFA0203900)
Innovation Program of Shanghai Municipal Education Commission(2021-01-07-00-07-E00077)
Shanghai Municipal Science and Technology Commis-sion(21DZ1100900)
National Natural Science Foundation of China(51802041)
National Natural Science Foundation of China(61904032)
National Natural Science Foundation of China(61874154)
NETL
NSTL
维普
万方数据