Abstract
A facile and mild route to synthesize C-coated SiC nanosheets(SiC/C NSs)via wet-chemical etching in hydrofluoric acid(HF)at 60℃for 48 h using carbon aluminum silicate(Al4SiC4)as raw materials is reported for the first time.HF molecule leads to the breaking of C-Al bonds in Al4SiC4,which even-tually results in the formation of two-dimensional SiC nanosheets.A carbon layer with a thickness of approximately 1.5 nm is formed on the surface of SiC nanosheets due to the excess carbon.The prepared SiC/C NSs possess a smooth and rectangular sheet with a mean 150 nm in width,500 nm in length and 10 nm in thickness,respectively.The crystallographic characterization indicates that 3C-SiC and 2H-SiC coexist and the parallel plane relationship of 3C/2H-SiC heterojunction is(111)3C-SiC//(001)2H-SiC.Due to the formed 3C-SiC/2H-SiC heterojunction and graphitic carbon,the fabricated electrode based on SiC/C NSs exhibits prolonged cycling stability and high specific areal capacitance as a promising supercapacitor candidate.It remains 91.2％retention even after 20,000 cycles and 734 μF/cm2 at a scan rate of 10 mV/s.
基金项目
National Sci-ence Fund for Distinguished Young Scholars(52025041)
国家自然科学基金(51974021)
国家自然科学基金(51902020)
国家自然科学基金(51904021)
Fundamental Research Funds for the Central Universities(FRF-TP-18-045A1)
Fundamental Research Funds for the Central Universities(FRF-TP-19-004B2Z)
National Postdoctoral Program for Innovative Talents(BX20180034)
中国博士后科学基金(2018M641192)
维普
万方数据