Abstract
Mg-based thermoelectric materials have attracted more and more attention because of their rich com-position elements,green environmental protection,and lower price.In recent years,the thermoelectric properties of n-type Mg3Sb2 materials have been optimized by doping chalcogenide elements(S,Se,and Te)at the anionic position.In this work,n-type Mg3.2AxSb1.5Bi0.5(A=Gd,Ho;x=0.01,0.02,0.03,and 0.4)samples were prepared by the cation site doping of lanthanide elements(Gd and Ho).The research re-sults show that Gd and Ho doped n-type Mg3.2Sb1.5Bio.5 samples are entirely comparable to the S,Se,and Te doped n-type Mg3.2Sb1.5Bi0.5 samples,demonstrating more excellent thermoelectric properties.Dop-ing with lanthanides(Gd and Ho)at the Mg site increases the carrier concentration of the material to 8.161 x 1019 cm-3.Doping induces the contribution of more electron,thus obtaining higher conductiv-ity.The maximum zT value of the Mg3.2Gd0.02Sb1.5Bi0.5 and the Mg3.2HO0.02Sb1.5Bi0.5 samples reaches 1.61 and 1.55,respectively.This work theoretically and experimentally demonstrates Gd and Ho are efficient n-type dopants for Mg3.2Sb1.5Bi0.5 thermoelectric material.
基金项目
国家自然科学基金(51871240)
calculations were carried out at the National Supercomputing Center in Shenzhen(Shenzhen Cloud Computing Center)()
NETL
NSTL
万方数据