Abstract
Resistive switching devices with a high self-rectifying ratio are important for achieving the crossbar mem-ristor array that overcomes the sneak current issue.Herein,we demonstrate a single amorphous lithium lanthanum titanium oxide(LLTO)layer based Pt/LLTO/Pt device possessing a self-rectifying ratio higher than 1×104 that is comparable to the reported devices with complicated multi-layer stacking structures.Moreover,the device shows forming-free and highly uniform bipolar resistive switching(BRS)character-istic that facilitates the potential applications.The trap-controlled and trap-free space charge limited con-ductions are demonstrated to dominate the high and low resistance states of the device,respectively.The fast migration of lithium ions under external voltage accelerates the electron injection across the Pt/LLTO interface and also the space charge accumulation in the LLTO layer,and as a result,the high performance of the Pt/LLTO/Pt device was achieved.As demonstrated Pt/LLTO/Pt device sheds a light on the potential applications of the lithium ionic conductors in self-rectifying resistive switching devices.
基金项目
国家重点研发计划(2019YFB2005801)
国家自然科学基金(52061135205)
国家自然科学基金(51731003)
国家自然科学基金(51971024)
国家自然科学基金(51971023)
国家自然科学基金(51971027)
国家自然科学基金(51927802)
Beijing Natural Science Foundation Key Program(Z190007)
NETL
NSTL
维普
万方数据