Copper telluride with manipulated carrier concentrations for high-performance solid-state thermoelectrics

Hyun Ju ¹Dabin Park ²Minsu Kim ²Jooheon Kim³

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作者信息

1. G.W.Woodruff School of Mechanical Engineering,Georgia Institute of Technology,Atlanta,GA 30332,USA
2. School of Chemical Engineering&Materials Science,Chung-Ang University,Seoul 06974,Republic of Korea
3. School of Chemical Engineering&Materials Science,Chung-Ang University,Seoul 06974,Republic of Korea;Department of Intelligent Energy and Industry,Graduate School,Chung-Ang University,Seoul 06974,Republic of Korea;Department of Advance Materials Engineering,Chung-Ang University,Anseong 17546,Republic of Korea
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Abstract

This study proposed a strategy for effectively diminishing the carrier concentration in Cu2Te by introduc-ing graphene sheets.Based on thermoelectric property measurements and single parabolic band mod-eling,the incorporated graphene effectively reduced the carrier concentration,not only enhancing the thermoelectric performance of the Cu2Te/graphene composite but also substantially improving its figure of merit up to～1.47 at 1000 K,which is 268％higher than that of pristine Cu2Te.This study gives an insight into the control of carrier concentration and thermoelectric properties in Cu2Te,and it could be extended to other copper chalcogenides for excellent thermoelectrics.

Key words

Thermoelectric/Copper telluride/Graphene/Carrier concentration/Single parabolic band model

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基金项目

MSIT(Ministry of Science and ICT)Korea,under the ITRC(Information Technology Research Center)support program supervised by t(IITP-2020-2020-0-01655)

Competency Development Program for Industry Specialists of the Korean Ministry of Trade,Industry and Energy(MOTIE)()

operated by Korea Institute for Advancement of Technology(KIAT)(P0012453)

出版年

2022

材料科学技术(英文版)

中国金属学会中国材料研究学会中国科学院金属研究所

材料科学技术(英文版)

CSTPCDCSCDSCI

影响因子：0.657

ISSN：1005-0302

参考文献量55

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