材料科学技术(英文版)2024,Vol.168Issue(1) :208-214.DOI:10.1016/j.jmst.2023.05.034

Improvement of the conversion efficiency of Mg3Sb2 thermoelectric devices through optimizing the resistivity of the MgSbNi barrier layer

Huimin Zhang Yachao Wang Zuhair A.Munir Yongzhong Zhang Wenhao Fan Shaoping Chen
材料科学技术(英文版)2024,Vol.168Issue(1) :208-214.DOI:10.1016/j.jmst.2023.05.034

Improvement of the conversion efficiency of Mg3Sb2 thermoelectric devices through optimizing the resistivity of the MgSbNi barrier layer

Huimin Zhang 1Yachao Wang 2Zuhair A.Munir 3Yongzhong Zhang 1Wenhao Fan 4Shaoping Chen1
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作者信息

  • 1. College of Materials Science and Engineering,Taiyuan University of Technology,Taiyuan,030024,China
  • 2. College of Materials Science and Engineering,Taiyuan University of Technology,Taiyuan,030024,China;Capital Aerospace Machinery Company,Beijing,100076,China
  • 3. Department of Material Science and Engineering.University of California,Davis,California,95616,United States of America
  • 4. College of Physics and Optoelectronics,Taiyuan University of Technology,Taiyuan,030024,China;Instrumental Analysis Center of Taiyuan University of Technology,Taiyuan,030024,China
  • 折叠

Abstract

Mg3Sb2-based thermoelectric materials have been the focus of widespread investigations as promising candidates for the harvesting of waste heat.Interface stability and service performance are key points for the commercial applications of these materials.We utilized Mg4.3Sb3Ni as a barrier layer to improve the thermal stability of Mg3Sb2-based devices.However,its intrinsic high resistivity contributed nega-tively to the desired performance of the device.In this work,we investigated two other Mg-Sb-Ni ternary phases,MgSbNi and MgSbNi2,as new barrier layer materials to connect with Mg3.2Sb2Y0.05.The results show that the efficiency of the Mg1.2SbNi/Mg3.2Sb2Y0.05/Mg1.2SbNi joint is increased by 33% relative to the higher Mg-content barriers due to lower resistivity.The system exhibited good interfacial compatibility and showed little change with aging at 673 K for 20 days.

Key words

Mg3Sb2/Mg1.2SbNi/Barrier layer/Conversion efficiency

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基金项目

国家自然科学基金(52202277)

Special Project of Science and Technology Cooperation and Exchange of Shanxi Province(202104041101007)

出版年

2024
材料科学技术(英文版)
中国金属学会 中国材料研究学会 中国科学院金属研究所

材料科学技术(英文版)

CSTPCDCSCD
影响因子:0.657
ISSN:1005-0302
参考文献量47
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