Improvement of the conversion efficiency of Mg3Sb2 thermoelectric devices through optimizing the resistivity of the MgSbNi barrier layer

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外文摘要：Mg3Sb2-based thermoelectric materials have been the focus of widespread investigations as promising candidates for the harvesting of waste heat.Interface stability and service performance are key points for the commercial applications of these materials.We utilized Mg4.3Sb3Ni as a barrier layer to improve the thermal stability of Mg3Sb2-based devices.However,its intrinsic high resistivity contributed nega-tively to the desired performance of the device.In this work,we investigated two other Mg-Sb-Ni ternary phases,MgSbNi and MgSbNi2,as new barrier layer materials to connect with Mg3.2Sb2Y0.05.The results show that the efficiency of the Mg1.2SbNi/Mg3.2Sb2Y0.05/Mg1.2SbNi joint is increased by 33％ relative to the higher Mg-content barriers due to lower resistivity.The system exhibited good interfacial compatibility and showed little change with aging at 673 K for 20 days.

外文关键词：

Mg3Sb2Mg1.2SbNiBarrier layerConversion efficiency

作者：

Huimin Zhang、Yachao Wang、Zuhair A.Munir、Yongzhong Zhang、Wenhao Fan、Shaoping Chen

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作者单位：

College of Materials Science and Engineering,Taiyuan University of Technology,Taiyuan,030024,China

Capital Aerospace Machinery Company,Beijing,100076,China

Department of Material Science and Engineering.University of California,Davis,California,95616,United States of America

College of Physics and Optoelectronics,Taiyuan University of Technology,Taiyuan,030024,China

Instrumental Analysis Center of Taiyuan University of Technology,Taiyuan,030024,China

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基金：

国家自然科学基金Special Project of Science and Technology Cooperation and Exchange of Shanxi Province

项目编号：

52202277202104041101007

出版年：

2024

DOI：

10.1016/j.jmst.2023.05.034

材料科学技术(英文版)

中国金属学会中国材料研究学会中国科学院金属研究所

材料科学技术(英文版)

CSTPCD

影响因子：0.657

ISSN：1005-0302

年,卷(期)：2024.168(1)

参考文献量47