首页|Bi2WO6/AgInS2 S-scheme heterojunction:Efficient photodegradation of organic pollutant and toxicity evaluation

Bi2WO6/AgInS2 S-scheme heterojunction:Efficient photodegradation of organic pollutant and toxicity evaluation

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Constructing of heterojunction was identified as a feasible way to improve photocatalytic activity of pho-tocatalyst.In this work,a n-p type Bi2WO6/AgInS2 S-scheme heterojunction was successfully prepared for organic pollutants degradation.This Bi2WO6/AgInS2 S-scheme heterojunction exhibited much higher pho-tocatalytic activity towards Rhodamine B(92.24%,expose to visible light for 60 min),norfloxacin(81.73%,expose to visible light for 90 min)and levofloxacin(87.46%,expose to visible light for 90 min)than pure Bi2WO6 and pure AgInS2.Toxicity analysis indicated the low environmental toxicity of Rhodamine B degradation intermediates for Rye seeds and Sudangrass seeds germination and growth.Mechanism study displayed that AgInS2 and Bi2WO6 work as the primary photocatalyst to form·O2-and ·OH,respectively.The improved photocatalytic activity of the Bi2WO6/AgInS2 S-scheme heterojunction was due to the im-proved light response range and intensified carrier separation capability.Additionally,a S-scheme charge transfer mechanism including multiple charge transfer channels was proposed.This work could provide an effective strategy for organic pollutants degradation in wastewater.

PhotocatalysisS-scheme heterojunctionAgInS2Bi2WO6Toxicity experiments

Yanyan Zhao、Xu Fan、Hongxing Zheng、Enzhou Liu、Jun Fan、Xuejun Wang

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College of Biology Pharmacy and Food Engineering,Shangluo University,Shangluo 726000,China

QinLing-Bashan Mountains Bioresources Comprehensive Development C.I.C.,Shaanxi University of Technology,Hanzhong 723001,China

School of Chemical Engineering,Northwest University,Xi'an 710069,China

Specialized Research Fund of Education Department of Shaanxi ProvinceCollege Students Innovation and Entrepreneurship Plan Training Program

22JY015S202211396006

2024

材料科学技术(英文版)
中国金属学会 中国材料研究学会 中国科学院金属研究所

材料科学技术(英文版)

CSTPCD
影响因子:0.657
ISSN:1005-0302
年,卷(期):2024.170(3)
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