Abstract
As a new type of nonvolatile memory,the resistive memristor has broad application prospects in in-formation storage and neural computing based on its excellent resistive switching(RS)performance.At present,it is still a great challenge to improve both ferroelectric polarization and leakage current to achieve a high RS on/off ratio of ferroelectric memristors.Herein,epitaxial Pb(Zr0.40Ti0.60)O3(PZT)thin films with low content Ca doping were deposited on the Nb:SrTiO3 substrate to prepare PCZT/NSTO het-erostructures and their RS behaviors were studied.The research findings show that compared with pure PZT film,the ferroelectric polarization of 1-mol％-Ca-doped PZT film is slightly improved,while the leak-age current is increased by three orders of magnitude.Therefore,the RS on/off ratio reaches 2.5 x 105,about three orders of magnitude higher than pure PZT films.The theoretical analysis reveals that the RS behavior of PCZT/NSTO heterostructures is controlled by the PCZT/NSTO interfacial barrier and the space charge-limited current mechanism.Our results demonstrate that the ferroelectricity and electricity of ferroelectric thin films can be improved simultaneously by doping low-content Ca ions to increase the RS performance,which provides a good reference for the development of high-performance ferroelectric memristor devices.
基金项目
Central Government Guiding Local science and Technology Development Funds of Liaoning Province in 2021(2021JH6/10500168)
National Basic Research Program of China(2017YFA0206302)
NETL
NSTL
万方数据