首页|Enhanced memristor performance via coupling effect of oxygen vacancy and ferroelectric polarization

Enhanced memristor performance via coupling effect of oxygen vacancy and ferroelectric polarization

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As a new type of nonvolatile memory,the resistive memristor has broad application prospects in in-formation storage and neural computing based on its excellent resistive switching(RS)performance.At present,it is still a great challenge to improve both ferroelectric polarization and leakage current to achieve a high RS on/off ratio of ferroelectric memristors.Herein,epitaxial Pb(Zr0.40Ti0.60)O3(PZT)thin films with low content Ca doping were deposited on the Nb:SrTiO3 substrate to prepare PCZT/NSTO het-erostructures and their RS behaviors were studied.The research findings show that compared with pure PZT film,the ferroelectric polarization of 1-mol％-Ca-doped PZT film is slightly improved,while the leak-age current is increased by three orders of magnitude.Therefore,the RS on/off ratio reaches 2.5 x 105,about three orders of magnitude higher than pure PZT films.The theoretical analysis reveals that the RS behavior of PCZT/NSTO heterostructures is controlled by the PCZT/NSTO interfacial barrier and the space charge-limited current mechanism.Our results demonstrate that the ferroelectricity and electricity of ferroelectric thin films can be improved simultaneously by doping low-content Ca ions to increase the RS performance,which provides a good reference for the development of high-performance ferroelectric memristor devices.

Ferroelectric memristorCa-doped PZTFerroelectric polarizationOxygen vacanciesResistive switching

Zhi Yun Yue、Zhi Dong Zhang、Zhan Jie Wang

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Shenyang National Laboratory for Materials Science,Institute of Metal Research,Chinese Academy of Sciences,Shenyang 110016,China

School of Materials Science and Engineering,University of Science and Technology of China,Shenyang 110016,China

School of Materials Science and Engineering,Shenyang University of Technology,Shenyang 110870,China

Central Government Guiding Local science and Technology Development Funds of Liaoning Province in 2021National Basic Research Program of China

2021JH6/105001682017YFA0206302

2024

10.1016/j.jmst.2023.07.007

材料科学技术(英文版)
中国金属学会 中国材料研究学会 中国科学院金属研究所

材料科学技术(英文版)

CSTPCD
影响因子：0.657
ISSN：1005-0302
年,卷(期)：2024.171(4)
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