首页|CuInS2 quantum-dot-modified g-C3N4 S-scheme heterojunction photocatalyst for hydrogen production and tetracycline degradation

CuInS2 quantum-dot-modified g-C3N4 S-scheme heterojunction photocatalyst for hydrogen production and tetracycline degradation

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CulnS2 quantum-dot(CIS QD)-modified g-C3N4(CN)catalysts(CIS/CN)were prepared with the aid of an in-situ growth process.The as-obtained photocatalysts were explored by measuring their crystallinity,surface morphology,binding energy and light absorption activity.The photocatalytic efficiency of the pho-tocatalysts was evaluated through photocatalytic water splitting for hydrogen production and tetracycline(TC)antibiotic degradation under the simulated solar light and visible light respectively.The optimized sample(10CIS/CN)showed the best photocatalytic activity:producing 102.4 μmol g-1 h-1 of hydrogen in 1 h,or degrading 52.16％of TC in 120 min,which were respectively 48 or 3.4 times higher than the photocatalytic activity of CN itself.The enhancement in the efficiency of the composite system was prin-cipally accredited to the enlargement of light absorption,the more effective in charge transfer and the dropping of the charge carrier pair recombination through a formed S-scheme heterojunctional interface.This work is an effort to adjust CN-based polysulfide QD for speedy photocatalysis.The enriched photo-catalytic activity grants a new sense for adjusting the optical properties of CN.

CuInS2 QDsg-C3N4PhotocatalysisHydrogen productionS-scheme heterojunction

Jingjing Zhang、Yue Zhao、Kezhen Qi、Shu-yuan Liu

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College of Pharmacy,Dali University,Dali 671000,China

Department of Pharmacology,Shenyang Medical College,Shenyang 110034,China

National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaProject from Yunnan ProvinceProject from Yunnan ProvinceDevelopment Fund from Dali University

522722872226800322202138202301AT070027202305AF150116KY2296129740

2024

10.1016/j.jmst.2023.06.042

材料科学技术(英文版)
中国金属学会 中国材料研究学会 中国科学院金属研究所

材料科学技术(英文版)

CSTPCD
影响因子：0.657
ISSN：1005-0302
年,卷(期)：2024.172(5)
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