首页|Temperature-dependent photoluminescent behavior of millimeter-scale Cs4PbBr6/CsPbBr3 bulk crystals and their application to white light-emitting diodes

Temperature-dependent photoluminescent behavior of millimeter-scale Cs4PbBr6/CsPbBr3 bulk crystals and their application to white light-emitting diodes

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The zero-dimensional perovskite composite Cs4PbBr6/CsPbBr3 has attracted significant attention for its remarkable photoluminescence(PL),which remains highly effective even in solid state.This work presents a detailed analysis of the steady-state and time-resolved PL(TRPL)behavior of millimeter-scale Cs4PbBr6/CsPbBr3 crystals over a temperature range of 80 to 360 K,which covers exciton binding en-ergy,phonon energy,and PL peak energy shifting with increasing temperature.According to the results,Cs4PbBr6/CsPbBr3 exhibits high exciton binding energy and phonon energy,with calculated values of 358.7 and 94.8 meV,respectively.Specifically,when the temperature is below～235 K,thermal expan-sion dominates to influence the TRPL and peak energy,whereas electron-phonon interaction becomes the dominant factor as temperature rises from 235 to 325 K.It is found that Cs4PbBr6/CsPbBr3 has a PL behavior similar to CsPbBr3,and characterization and TRPL results demonstrate that nanometer-scale CsPbBr3 crystals embed in the Cs4PbBr6 bulk matrix.Meanwhile,a white light-emitting diode(WLED)device based on Cs4PbBr6/CsPbBr3 with luminous efficiency of 64.56 Im/W is fabricated,and its color coordinate is measured as(0.34,0.31)under 20 mA,which is in close proximity to the standard white color coordinate.Moreover,the color gamut of the device is measured as 128.66％of the National Televi-sion Systems Committee(NTSC).The WLED electroluminescence(EL)spectra show high Correlated Color Temperature(CCT)stability for the working current varying from 5 to 100 mA,and after continuous oper-ation for 12 h,the EL intensity decreases and stabilizes at～70％of the initial EL intensity.These findings suggest that Cs4PbBr6/CsPbBr3 crystals are a promising candidate for WLEDs.

Zero-dimensional perovskitesPhotoluminescenceExciton binding energyWhite light-emitting diode

Qi Wang、Sirous Khabbaz Abkenar、Matilde Cirignano、Hailong Yu、Wenzhi Wu、Giorgio Divitini

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School of Electronic Engineering,Heilongjiang University,Harbin 150030,China

Electron Spectroscopy and Nanoscopy,Istituto Italiano di Tecnologia,Genova 16163,Italy

Dipartimento di Chimica e Chimica Industriale,Università degli Studi di Genova,Genova 16146,Italy

Photonic Nanomaterials,Istituto Italiano di Tecnologia,Genova 16163,Italy

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Heilongjiang Provincial Key Laboratory of Micronano Sensitive Devices and Systems(Heilongjiang)Cultivation project of double firstclass initiative discipline by Heilongjiang ProvinceEuropean Research Council(ERC)under the European Union's Horizon 2020 research and innovation programNANOLED ERC-2019-STG

LJGXCG2022-061851794

2024

10.1016/j.jmst.2023.08.061

材料科学技术(英文版)
中国金属学会 中国材料研究学会 中国科学院金属研究所

材料科学技术(英文版)

CSTPCD
影响因子：0.657
ISSN：1005-0302
年,卷(期)：2024.179(12)
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