首页|Fretting wear resistance of amorphous/amorphous(AlCrFeNi)N/TiN high entropy nitride nanolaminates
Fretting wear resistance of amorphous/amorphous(AlCrFeNi)N/TiN high entropy nitride nanolaminates
扫码查看
点击上方二维码区域,可以放大扫码查看
原文链接
NETL
NSTL
万方数据
The application of amorphous high entropy ceramics as wear-resistant materials is limited due to their inherent brittleness at room temperature and strain softening during deformation.In order to overcome this limitation,we constructed amorphous/amorphous(AlCrFeNi)N/TiN nanolaminates with varying mod-ulation period thickness by introducing a second amorphous phase through reactive radio frequency(RF)magnetron sputtering,along with corresponding monolithic amorphous films.Microstructure,mechanical properties,and tribological behaviors of the films were characterized wear in detail.Fretting wear results show that the nanolaminates with an average modulation period of 6 nm exhibited a wear rate of 2.8 times lower than that of the(AlCrFeNi)N film and 8.4 times lower than that of the TiN film.Further anal-ysis usingFIB-TEM revealed that the enhanced wear resistance of(AlCrFeNi)N/TiN nanolaminates was at-tributed to the high-density heterointerfaces.These interfaces inhibited the initiation and propagation of mature shear bands and acted as barriers to stress distribution.Additionally,the oxide composite layer at the interface demonstrated a synergistic effect through a mechanically induced tribo-chemical reaction,resulting in slight plastic deformation.For the amorphous(AlCrFeNi)N film,moderate wear resistance was achieved through the formation of transfer layer at the interface.For the amorphous TiN film,the dimensional stability of the film deteriorates due to the significant strain softening that occurs during deformation.This study deepens our understanding of the friction mechanisms involved in amorphous high entropy ceramics,offering valuable insights for the design of high damage-resistant materials.
High entropy alloyNanolaminatesMagnetron sputteringFretting wearMicrostructure
Qingchun Chen、Xiyu Xu、An Li、Quande Zhang、Hengming Yang、Nan Qiu、Yuan Wang
展开 >
Key Laboratory of Radiation Physics and Technology of Ministry of Education,Institute of Nuclear Science and Technology,Sichuan University,Chengdu 610064,China
The First Sub-institute,Nuclear Power Institute of China,Chengdu 610041,China
School of Mechanical and Automotive Engineering,Qingdao University of Technology,Qingdao 266525,China
国家自然科学基金四川省自然科学基金Foundation of Key Laboratory of Radiation Physics and Technology of the Ministry of Education