首页|Ultra-thin vertical tft photosensor and photosynapse based on au-doped-graphene under transition metal selenide reaction

Ultra-thin vertical tft photosensor and photosynapse based on au-doped-graphene under transition metal selenide reaction

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The development of artificial photosensitive synapses with high sensitivity and biomimetic properties that combine innovative concepts and neuromorphic architectures is crucial to achieving highly integrated and flexible intelligent visual systems.Recently,graphene heterostructure-based photosensitive synaptic transistors have been extensively studied for this purpose.However,compared to traditional transistors,vertical structure thin film transistors(VTFTs)with ultra-short channels and advantages,such as high integration,have yet to be investigated in photosensitive synapses.Here,we report an ultra-thin VTFT featuring a graphene/WxSex-1 van der Waals heterostructure that combines photonic and neuromorphic elements.We demonstrate a VTFT in which the channel layer is formed by covalently bonded WxSex-1 nanomaterials produced by introducing Se atoms on the surface of a tungsten metal thin film deposited via radio-frequency sputtering.This structure successfully simulated the main synaptic function,exhib-ited photosensitive synaptic responses to ultraviolet(λ=365 nm)light,and demonstrated highly reliable electrical performance.Furthermore,the incorporation of gold nanoparticles changed the photosensitive synaptic response properties of the graphene/WxSex-i heterostructure from excitatory to inhibitory,show-ing a responsivity of about～14 A W-1,which was attributed to the heterojunction interface resonant effects and efficient charge transfer induced by localized surface plasmons.This further enabled optical artificial synaptic applications while operating with low voltage spikes and low light intensity.This work provides a novel strategy for integrating and developing biological and nano-electronic systems.

Ultra-thinVertical TFTAu nanoparticlesPhoto sensorPhoto responsivityPhoto synapse

Ting Kang、Adila Rani、Wanqi Ren、M Junaid Sultan、Nae-Eung Lee、Tae Geun Kim

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School of Electrical Engineering,Korea University,Seoul 02841,South Korea

School of Advanced Materials Science & Engineering,Sungkyunkwan University,Gyeonggi-do 16419,South Korea

National Research Foundation of Korea,funded by the Korean governmentNational Research Foundation of Korea,funded by the Korean government

2016R1A3B19082492020R1A2C3013480

2024

10.1016/j.jmst.2023.10.029

材料科学技术(英文版)
中国金属学会 中国材料研究学会 中国科学院金属研究所

材料科学技术(英文版)

CSTPCD
影响因子：0.657
ISSN：1005-0302
年,卷(期)：2024.183(16)