Abstract
Slicing and post-treatment of SiC crystals have been a significant challenge in the integrated circuit and microelectronics industry.To compete with wire-sawing and mechanical grinding technology,a promis-ing approach combining laser slicing and laser polishing technologies has been innovatively applied to increase utilization and decrease damage defects for single crystal 4H-SiC.Significant material utiliza-tion has been achieved in the hybrid laser processes,where material loss is reduced by 75％compared to that of conventional machining technologies.Without any special process control or additional treat-ment,an internally modified layer formed by laser slicing can easily separate the 4H-SiC crystals using an external force of about～3.6 MPa.The modified layer has been characterized using a micro-Raman method to determine residual stress.The sliced surface exhibits a combination of smooth and coarse appearances around the fluvial morphology,with an average surface roughness of over Sa 0.89 μm.An amorphous phase surrounds the SiC substrate,with two dimensions of lattice spacing,d=0.261 nm and d=0.265 nm,confirmed by high-resolution transmission electron microscopy(HRTEM).The creation of laser-induced periodic surface nanostructures in the laser-polished surface results in a flatter surface with an average roughness of less than Sa 0.22 μm.Due to the extreme cooling rates and multiple thermal cy-cles,dissociation of Si-C bonding,and phase separation are identified on the laser-polished surface,which is much better than that of the machining surface.We anticipate that this approach will be applicable to other high-value crystals and will have promising viability in the aerospace and semiconductor industries.
基金项目
National Natural Science Foundation of China(62304249)
China Postdoctoral Science Foundation(2023M733704)
NETL
NSTL
万方数据