首页|Room temperature growth of CsPbBr3 single crystal for asymmetric MSM structure photodetector

Room temperature growth of CsPbBr3 single crystal for asymmetric MSM structure photodetector

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UV-visible broadband light harvesting ability is critical for photodetectors,and all inorganic perovskite CsPbBr3 is regarded as a promising candidate as the response active material.Herein,a saturated-solution crystallization method is employed to synthesize CsPbBr3 single crystal.Temperature-dependent photo-luminescence spectra with one-photon and two-photon excitation are systematically investigated,deter-mining a large exciton binding energy of 39.8 meV.This allows the stable excitonic emission of CsPbBr3 single crystal at room temperature.Subsequently,an asymmetric structure CsPbBr3 photodetector is fab-ricated by using InGa alloy as the Ohmic electrode and Au as the Schottky electrode.At-8 V,the device exhibits a prominent response to the irradiation from UV to green band with a maximum responsiv-ity of 2.56 A/W,an external quantum efficiency of 580%,and a detectivity of 1.24 × 1013 Hz1/2 W-1.In addition,the CsPbBr3 photodetector also presents rapid response speeds at both reverse and forward bias voltages and self-powered characteristics owing to the Schottky depletion layer underneath the Au electrode.The demonstration of asymmetric metal-semiconductor-metal(MSM)structure photodetector presents a promising pathway toward next-generation CsPbBr3 optoelectronic devices.

Room temperatureCsPbBr3Single crystalAsymmetricPhotodetector

Longxing Su

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International School of Microelectronics,Dongguan University of Technology,Dongguan 523808,China

National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaDongguan University of Technology Startup Fund

5217214961705043221110144

2024

材料科学技术(英文版)
中国金属学会 中国材料研究学会 中国科学院金属研究所

材料科学技术(英文版)

CSTPCD
影响因子:0.657
ISSN:1005-0302
年,卷(期):2024.187(20)
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