首页|Low-temperature bonding of Si and polycrystalline diamond with ultra-low thermal boundary resistance by reactive nanolayers
Low-temperature bonding of Si and polycrystalline diamond with ultra-low thermal boundary resistance by reactive nanolayers
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Thermal management is a critical challenge in modem electronics and recent key innovations have fo-cused on integrating diamond directly onto semiconductors for efficient cooling.However,the connec-tion of diamond/semiconductor that can simultaneously achieve low thermal boundary resistance(TBR),minimal thermal budget,and sufficient mechanical robustness remains a formidable challenge.Here,we propose a collective wafer-level bonding technique to connect polycrystalline diamonds and semiconduc-tors at 200 ℃ by reactive metallic nanolayers.The resulting silicon/diamond connections exhibited an ultra-low TBR of 9.74 m2 K GW-1,drastically outperforming conventional die-attach technologies.These connections also demonstrate superior reliability,withstanding at least 1000 thermal cycles and 1000 h of high temperature/humidity torture.These properties were affiliated with the recrystallized microstructure of the designed metallic interlayers.This demonstration represents an advancement for low-temperature and high-throughput integration of diamonds on semiconductors,potentially enabling currently thermally limited applications in electronics.
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