Stable switching behavior of low-temperature ZrO2 RRAM devices realized by combustion synthesis-assisted photopatterning

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外文摘要：We have realized efficient photopatterning and high-quality ZrO2 films through combustion synthesis and manufactured resistive random access memory(RRAM)devices with excellent switching stability at low temperatures(250 ℃)using these approaches.Combustion synthesis reduces the energy required for ox-ide conversion,thus accelerating the decomposition of organic ligands in the UV-exposed area,and pro-moting the formation of metal-oxygen networks,contributing to patterning.Thermal analysis confirmed a reduction in the conversion temperature of combustion precursors,and the prepared combustion ZrO2 films exhibited a high proportion of metal-oxygen bonding that constitutes the oxide lattice,along with an amorphous phase.Furthermore,the synergistic effect of combustion synthesis and UV/O3-assisted photochemical activation resulted in patterned ZrO2 films forming even more complete metal-oxygen networks.RRAM devices fabricated with patterned ZrO2 films using combustion synthesis exhibited ex-cellent switching characteristics,including a narrow resistance distribution,endurance of 103 cycles,and retention for 105 s at 85 ℃,despite low-temperature annealing.Combustion synthesis not only enables the formation of high-quality metal oxide films with low external energy but also facilitates improved photopatterning.

外文关键词：

ZrO2CombustionSol-gelRRAMPatterning

作者：

Bongho Jang、Junil Kim、Jieun Lee、Jaewon Jang、Hyuk-Jun Kwon

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作者单位：

Department of Electrical Engineering and Computer Science,DGIST,Daegu 42988,Korea

School of Electronic and Electrical Engineering,Kyungpook National University,Daegu 41566,Korea

School of Electronics Engineering,Kyungpook National University,Daegu 41566,Korea

Convergence Research Advanced Centre for Olfaction,DGIST,Daegu 42988,Korea

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基金：

National Research Foundation of Korea(NRF)grants funded by the Ministry of Science and ICT(MSIT)National Research Foundation of Korea(NRF)grants funded by the Ministry of Science and ICT(MSIT)National Research Foundation of Korea(NRF)grants funded by the Ministry of Science and ICT(MSIT)DGIST R&D Program of the MSIT

项目编号：

RS-2023-00251283RS-2023-002570032022M3D1A208361823-CoE-BT-03

出版年：

2024

DOI：

10.1016/j.jmst.2023.12.016

材料科学技术(英文版)

中国金属学会中国材料研究学会中国科学院金属研究所

材料科学技术(英文版)

CSTPCD

影响因子：0.657

ISSN：1005-0302

年,卷(期)：2024.189(22)