Abstract
We have realized efficient photopatterning and high-quality ZrO2 films through combustion synthesis and manufactured resistive random access memory(RRAM)devices with excellent switching stability at low temperatures(250 ℃)using these approaches.Combustion synthesis reduces the energy required for ox-ide conversion,thus accelerating the decomposition of organic ligands in the UV-exposed area,and pro-moting the formation of metal-oxygen networks,contributing to patterning.Thermal analysis confirmed a reduction in the conversion temperature of combustion precursors,and the prepared combustion ZrO2 films exhibited a high proportion of metal-oxygen bonding that constitutes the oxide lattice,along with an amorphous phase.Furthermore,the synergistic effect of combustion synthesis and UV/O3-assisted photochemical activation resulted in patterned ZrO2 films forming even more complete metal-oxygen networks.RRAM devices fabricated with patterned ZrO2 films using combustion synthesis exhibited ex-cellent switching characteristics,including a narrow resistance distribution,endurance of 103 cycles,and retention for 105 s at 85 ℃,despite low-temperature annealing.Combustion synthesis not only enables the formation of high-quality metal oxide films with low external energy but also facilitates improved photopatterning.
基金项目
National Research Foundation of Korea(NRF)grants funded by the Ministry of Science and ICT(MSIT)(RS-2023-00251283)
National Research Foundation of Korea(NRF)grants funded by the Ministry of Science and ICT(MSIT)(RS-2023-00257003)
National Research Foundation of Korea(NRF)grants funded by the Ministry of Science and ICT(MSIT)(2022M3D1A2083618)
DGIST R&D Program of the MSIT(23-CoE-BT-03)
NETL
NSTL
万方数据