材料科学技术(英文版)2024,Vol.196Issue(29) :190-199.DOI:10.1016/j.jmst.2024.02.007

High-performance IGZO/In2O3 NW/IGZO phototransistor with heterojunctions architecture for image processing and neuromorphic computing

Can Fu Zhi-Yuan Li Yu-Jiao Li Min-Min Zhu Lin-Bao Luo Shan-Shan Jiang Yan Wang Wen-Hao Wang Gang He
材料科学技术(英文版)2024,Vol.196Issue(29) :190-199.DOI:10.1016/j.jmst.2024.02.007

High-performance IGZO/In2O3 NW/IGZO phototransistor with heterojunctions architecture for image processing and neuromorphic computing

Can Fu 1Zhi-Yuan Li 2Yu-Jiao Li 1Min-Min Zhu 1Lin-Bao Luo 2Shan-Shan Jiang 3Yan Wang 2Wen-Hao Wang 1Gang He1
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作者信息

  • 1. School of Materials Science and Engineering,Anhui University,Hefei 230601,China
  • 2. School of Microelectronics,Hefei University of Technology,Hefei 230009,China
  • 3. School of Integration Circuits,Anhui University,Hefei 230601,China
  • 折叠

Abstract

The development of high-performance neuromorphic phototransistors is of paramount importance for image perception and depth memory learning.Here,based on metal-oxide heterojunction architecture,artificial synaptic phototransistors with synaptic plasticity have been achieved,demonstrating an arti-ficial synapse that integrates central and optic nerve functions.Thanks to the sensitive light-detection properties,the optical power consumption of such photonic artificial synapses can be as low as 22 pico-joules,which is extremely competitive compared with other pure metal oxide photoelectric synapses ever reported.What is more,owing to its good short-term(STP)and tunable amplitude-frequency character-istics,the as-constructed device can function as a biomimetic high-pass filter for picture edge detection.Dual-mode synaptic modulation has been performed,combining photonic pulse with gate voltage stim-ulus.After photoelectric-synergistic modulation,the high synaptic weights enable the device to simulate complex neural learning rules for neuromorphic applications,including gesture recognition,image per-ception in the visual system,and classically conditioned reflexes.These results suggest that the current oxide-based heterojunction architecture displays potential application in future multifunction neuromor-phic devices and systems.

Key words

Metal oxide/Artificial synaptic devices/Phototransistor/Associative-memory-learning/Neuromorphic applications

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基金项目

National Natural Science Foundation of China(11774001)

National Natural Science Foundation of China(52202156)

National Natural Science Foundation of China(52103297)

Anhui Project(Z010118169)

Scientific research project of colleges and universities in Anhui Province(2022AH050113)

University Synergy Innovation Program of Anhui Province(GXXT-2022-012)

Postdoctoral daily public startup funds of Anhui University(S202418001/069)

出版年

2024
材料科学技术(英文版)
中国金属学会 中国材料研究学会 中国科学院金属研究所

材料科学技术(英文版)

CSTPCDCSCD
影响因子:0.657
ISSN:1005-0302
参考文献量75
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