Structure evolution and τf influence mechanism of Bi1-xHoxVO4 microwave dielectric ceramics for LTCC applications

Huaicheng Xiang ¹Yuheng Zhang ²Junqi Chen ³Yang Zhou ²Ying Tang ¹Jinwu Chen ³Liang Fang⁴

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作者信息

1. Key Laboratory of Low-Dimensional Structural Physics and Application,Education Department of Guangxi Zhuang Autonomous Region,College of Physics and Electronic Information Engineering,Guilin University of Technology,Guilin,541004,China;Guangxi Universities Key Laboratory of Non-Ferrous Metal Oxide Electronic Functional Materials and Devices,Guangxi Key Laboratory of Optical and Electronic Materials and Devices,College of Materials Science and Engineering,Guilin University of Technology,Guilin,541004,China
2. Key Laboratory of Low-Dimensional Structural Physics and Application,Education Department of Guangxi Zhuang Autonomous Region,College of Physics and Electronic Information Engineering,Guilin University of Technology,Guilin,541004,China
3. School of Mechanical Engineering,Guilin University of Aerospace Technology,Guilin,541004,China
4. Guangxi Universities Key Laboratory of Non-Ferrous Metal Oxide Electronic Functional Materials and Devices,Guangxi Key Laboratory of Optical and Electronic Materials and Devices,College of Materials Science and Engineering,Guilin University of Technology,Guilin,541004,China
折叠

Abstract

Bi1-xHoxVO4(0.1 ≤ x ≤ 0.9)ceramics were prepared via a solid-state reaction method,and all the ceram-ics could be well densified in the 920-980 ℃ range.The ceramics with 0.1 ≤ x＜0.4 were composed of both monoclinic scheelite(M)and tetragonal zircon(T)phases,and a single M phase could be obtained in the range of x ≥ 0.4.The measured εr decreased from 58.9(x=0.1)to 14.7(x=0.9),so do the calcu-lated values(εr(C-M)=34.3-12.1),and the main reason for εr＞εr(c-M)was the rattling of Ho3+in the dodecahedron.Two points with zero τf appeared in Bi1-xHoxVO4(0 ≤ x ≤ 1)ceramics,and the best mi-crowave dielectric properties with εr=16.6,Q × f=18,400 GHz(f=10.69 GHz),and τf=+3.29 ppm/℃ were obtained in the Bi0.2Ho0.8VO4 ceramic.The change in temperature coefficient of ionic polarizability(ταm)caused by the rattling effect of cations is the physical essence that affects τf.Therefore,the rattling effect can be used as an effective mechanism to regulate τf in low-εr materials.Furthermore,there was no chemical reaction between Bi1-xHoxVO4 and Ag electrode,which indicates potential applications in low-temperature co-fired ceramic(LTCC)technology.

Key words

Bi1-xHoxVO4/Near-zero τf/Bond valence/Rattling effect/LTCC

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基金项目

Natural Science Foundation of Guangxi Zhuang Autonomous Region(2023GXNSFBA026076)

Guangxi Key Laboratory of Optical and Electronic Materials and Devices(22KF-10)

Natural Science Foundation of China(21965009)

Natural Science Foundation of China(22105048)

Guilin University of Technology Research Startup Project(GUTQDJJ2021073)

Guangxi BaGui Scholars Special Funding()

出版年

2024

材料科学技术(英文版)

中国金属学会中国材料研究学会中国科学院金属研究所

材料科学技术(英文版)

CSTPCD

影响因子：0.657

ISSN：1005-0302

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