Abstract
Ferroelectric capacitors hold great promise for non-volatile memory applications.However,the challenge lies in fabricating resistive switching devices with a high on/off ratio,excellent non-volatility,and a simple manufacturing process.Here,a novel approach is introduced by demonstrating the efficacy of the coupling effect between ferroelectric polarization and oxygen vacancy-based conductive filaments in Hf0.5Zr0.5O2(HZO)films for the creation of non-volatile resistive switching memory devices,achiev-ing an impressive on/off ratio of 6.8 x 103 at+1.8 V.An in-depth exploration of the resistive switching mechanism is provided and subsequently the outstanding durability and retention characteristics of these devices for resistive switching is validated.Furthermore,the device's capacity to emulate non-volatile synaptic functionalities is assessed.Our results reveal that under pulsed conditions of 1 V/-2 V with 1 ps pulses spaced 50 ms apart,the device can robustly achieve potentiation/depression synaptic plasticity,while exhibiting energy consumption(0.16 fJ for potentiation,0.12 f]for depression)reduced by 1-2 or-ders of magnitude compared to biological synapses.This work holds significant value as a reference for the fabrication of energy-efficient,non-volatile memory and synaptic devices.
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