Abstract
In the pursuit to overcome the limitations posed by traditional hole injection layers(HILs),such as PE-DOT:PSS,researchers are focusing on innovative strategies to modify electrode/organic interfaces to facil-itate charge-carrier injection and reduce the turn-on voltage,particularly in the context of high-efficiency organic light-emitting diodes(OLEDs).Two-dimensional materials show great potential in addressing the energy barrier challenges at electrode/organic interfaces owing to their exceptional optoelectronic prop-erties and robust chemical stability.However,their implementation in OLEDs has been hindered by com-plex fabrication processes and work function(WF)mismatches.This study presents a novel approach by introducing a magnetron-sputtered MoTe2 as HIL via two-step O2 doping.This strategy enhances the crystallinity of MoTe2 at a relatively low annealing temperature(350 ℃),combined with a plasma-treated anode possessing high WF(approximately 5.05 eV),high transmittance(93％at 478 nm),and low sheet resistance(33 Ω/sq).Consequently,compared with the conventional blue thermally activated delayed-fluorescence OLED using MoO3 as a HIL,the external quantum efficiency of the manufactured device us-ing MoTe2 as a HIL was improved by 57％and turn-on voltage was reduced to 2.6 V.This study provides a new pathway for overcoming the limitations of conventional solution-based HILs and chemical vapor deposition techniques to industrialize the large-scale manufacturing and commercialization of OLEDs.
NETL
NSTL
万方数据