材料科学技术(英文版)2024,Vol.200Issue(33) :253-264.DOI:10.1016/j.jmst.2024.02.055

Probing charge transfer of NiCo2O4/g-C3N4 photocatalyst for hydrogen production

Songyu Yang Kailin Wang Zhen Wu Yan Wu
材料科学技术(英文版)2024,Vol.200Issue(33) :253-264.DOI:10.1016/j.jmst.2024.02.055

Probing charge transfer of NiCo2O4/g-C3N4 photocatalyst for hydrogen production

Songyu Yang 1Kailin Wang 1Zhen Wu 2Yan Wu1
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作者信息

  • 1. Faculty of Materials Science and Chemistry,China University of Geosciences,Wuhan 430074,China
  • 2. Department of Chemical Engineering,Ordos Institute of Technology,Ordos 017000,China
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Abstract

Quantum dots/two-dimensional(0D/2D)semiconductor photocatalysts demonstrate wide solar light ab-sorption region and high charge transfer efficiency.However,the relation between the interfacial electric field and the charge transfer during the photocatalytic hydrogen production process is still unclear.Here,we construct NiCo2O4 quantum dots(QDs)and NiCo2O4 nanoparticles(NPs)anchored with 2D g-C3N4(CN)to form NiCo2O4-QDs/CN and NiCo2O4-NPs/CN heterojunctions.The hydrogen production rate of CN loaded with NiCo2O4 QDs is about 3 times higher than that of CN loaded with NiCo2O4 NPs.The electric field intensity at the NiCo2O4-QDs/CN interface is calculated to be about 15,600 V cm-2,about 9 times higher than that of NiCo2O4-NPs/CN,which could effectively drive the electrons of CN to flow toward NiCo2O4 QDs,promoting photocarriers separation and hence greatly improving the photocatalytic per-formance.This work provides a method to understand the relationship between interfacial electric field strength and photogenerated charges of heterostructure photocatalysts.

Key words

Quantum dots/g-C3N4 nanosheet/S-scheme photocatalyst/Interfacial electric field/Surface potential probing

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出版年

2024
材料科学技术(英文版)
中国金属学会 中国材料研究学会 中国科学院金属研究所

材料科学技术(英文版)

CSTPCDCSCD
影响因子:0.657
ISSN:1005-0302
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