首页|Quantum transport in WSe2/SnSe2 tunneling field effect transistors with high-κ gate dielectrics

Quantum transport in WSe2/SnSe2 tunneling field effect transistors with high-κ gate dielectrics

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Combining two-dimensional materials and high-k gate dielectrics offers a promising way to enhance the device performance of tunneling field-effect transistor(TFET).In this work,the device performance of WSe2/SnSe2 TFET with various gate dielectric materials is investigated based on quantum transport sim-ulation.Results show that TFETs with high-κ gate dielectric materials exhibit improved on-off ratio and enhanced transconductance.The optimized WSe2/SnSe2 TFET with TiO2 gate dielectrics achieves an on-state current of 1560 μA/µm and a subthreshold swing(SS)of 48 mV/dec.The utilization of high-κ gate dielectric materials results in shorter tunneling length,higher transmission efficiency,and increased elec-tron tunneling probability.The performance of the WSe2/SnSe2 TFET would be affected by the presence of the underlap region.Moreover,WSe2/SnSe2 TFETs with La2O3 dielectric can be scaled down to 3 nm while meeting high-performance(HP)device requirements according to the International Technology Roadmap for Semiconductors(ITRS).This research presents a practical solution for designing advanced logic devices in the sub-5 nm technology node.

Tunneling field-effect transistorHigh-κ gate dielectricsQuantum transport calculation

Hailing Guo、Zhaofu Zhang、Chen Shao、Wei Yu、Qingzhong Gui、Peng Liu、Hongxia Zhong、Ruyue Cao、John Robertson、Yuzheng Guo

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School of Electrical Engineering and Automation,Wuhan University,Wuhan 430072,China

The Institute of Technological Sciences,Wuhan University,Wuhan 430072,China

Hubei Key Laboratory of Electronic Manufacturing and Packaging Integration,Wuhan University,Wuhan 430072,China

Guangxi Power Grid Company Co.,Ltd.,Nanning 530023,China

School of Mathematics and Physics,China University of Geosciences,Wuhan 430074,China

Department of Engineering,University of Cambridge,Cambridge CB2 1PZ,United Kingdom

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2024

10.1016/j.jmst.2024.01.098

材料科学技术(英文版)
中国金属学会 中国材料研究学会 中国科学院金属研究所

材料科学技术(英文版)

CSTPCD
影响因子：0.657
ISSN：1005-0302
年,卷(期)：2024.201(34)