首页|Fabricating S-scheme Sb2S3@CdSexS1-x quasi-one-dimensional heterojunction photoanodes by in-situ growth strategy towards photoelectrochemical water splitting

Fabricating S-scheme Sb2S3@CdSexS1-x quasi-one-dimensional heterojunction photoanodes by in-situ growth strategy towards photoelectrochemical water splitting

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Nowadays,energy and environmental problems are becoming increasingly prominent in society,the de-velopment of clean and environmentally friendly energy is in line with the construction of ecological civilization and energy,which have attracted the attention of many researchers over the past decades.Narrow band gap semiconductor Sb2S3 is widely used in the area of solar cells because of its high light absorption coefficient and suitable bandgap width.However,numerous deep-level defects provide plen-tiful photogenerated carrier recombination sites,which restricts the improvement of photoelectrochem-ical properties seriously.In this work,S-scheme Sb2S3@CdSexS1-x core-shell quasi-one-dimensional het-erojunction photoanodes were prepared on the FTO substrate by a two-step vapor transport deposition(VTD)method,chemical bath deposition(CBD)and in-situ selenization method.The results showed that CdSexS1-x nanoparticles(NPs)were tightly coated on the Sb2S3 nanorods(NRs).The photocurrent den-sity of the Sb2S3@CdSexS1-x photoanodes was 1.61 mA cm-2 under 1.23 VRHE.Compared with the Sb2S3 photoanodes(0.61 mA cm-2),Sb2S3@CdSexS1-x photoanodes obtained a 2.64-fold improvement,and the dark current was effectively reduced.It showed excellent stability and fast photocurrent response in a 600 s optical stability test.It was concluded that:(1)The charge transfer mechanism of the S-scheme can avoid the problem of high recombination rate of photogenerated charge carriers due to the defects of Sb2S3 effectively,and realized spatial separation of photogenerated carriers.(2)The[hkl]oriented Sb2S3 NRs and the formed quasi-one-dimensional heterostructures promote efficient carrier transport.(3)The introduction of Se effectively regulated the band structure of CdS,slowed down the photocorrosion of S,and improved the stability of the photoelectrodes significantly.

Sb2S3 nanorodsVapor transport depositionIn-situ selenizationS-scheme heterojunctionPhotoelectrochemical performance

Dekang Liu、Dekai Zhang、Yishan Wang、Enzhou Liu、Hui Miao

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School of Physics,Northwest University,Xi'an 710127,China

State Key Laboratory of Transient Optics and Photonics,Chinese Academy of Sciences,Xi'an 710119,China

School of Chemical Engineering,Northwest University,Xi'an 710127,China

2024

材料科学技术(英文版)
中国金属学会 中国材料研究学会 中国科学院金属研究所

材料科学技术(英文版)

CSTPCD
影响因子:0.657
ISSN:1005-0302
年,卷(期):2024.201(34)