首页|Thermally induced in situ fabrication of TiO2/CN heterojunction dopant for enhancement of hydrogen storage properties of LiAlH4

Thermally induced in situ fabrication of TiO2/CN heterojunction dopant for enhancement of hydrogen storage properties of LiAlH4

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Herein,a novel TiO2/CN heterojunction material has been prepared by one-step bubble template-assisted calcination to enhance the hydrogen storage capability of LiAlH4.The TEM,XPS and UPS analysis confirm that a heterostructure is formed between TiO2 and g-C3N4 successfully.The experimental findings indi-cate that the TiO2/CN significantly enhances the dehydrogenation performance of LiAlH4.For instance,the LiAlH4-7 wt%TiO2/CN starts to dehydrogenize at 76 ℃(94 ℃ less than pure LiAlH4)and releases 6.5 wt%H2 at 200 ℃.Meanwhile,LiAlH4-7 wt%TiO2/CN releases 4.9 wt%H2 at 120 ℃ within 50 min.The mech-anism analysis illustrates that AlTi3N is formed in situ during ball-milling.And density functional theory(DFT)calculation results reveal that the AlTi3N can weaken the Al-H bonds in LiAlH4 through interfacial charge transfer.Furthermore,the TiO2/CN heterostructure creates an internal electric field that generates an electron-rich layer.As a result,the negative electron layer at one end of the TiO2/CN heterojunction has an increased affinity for H,which enhances the dehydrogenation reaction of LiAlH4.Clearly,both the TiO2/CN heterostructure and AlTi3N contribute to the improvement of the dehydrogenation properties of LiAlH4.

Hydrogen storage materialLiAlH4TiO2Carbon nitrideHeterojunction

Guorong Zhang、Jiaxi Liu、Sheng Wei、Fen Xu、Lixian Sun、Yongpeng Xia、Hehui Wang、Jinfan Wu、Yuan Gao、Qiwei Shao、Yiting Bu、Yanxun Guan、Lumin Liao、Taigen Liang、Lina Qin

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Guangxi Key Laboratory of Information Materials & Guangxi Collaborative Innovation Center for Structure and Properties for New Energy and Materials,School of Material Science and Engineering,Guilin University of Electronic Technology,Guilin 541004,China

Institute of Technology for Carbon Neutrality,Shenzhen Institute of Advanced Technology,Chinese Academy of Sciences,Shenzhen 518055,China

2024

材料科学技术(英文版)
中国金属学会 中国材料研究学会 中国科学院金属研究所

材料科学技术(英文版)

CSTPCD
影响因子:0.657
ISSN:1005-0302
年,卷(期):2024.203(36)