Effect of Oxygen Content on Luminescence of Er3+ Ions in Al/Er Co-doped ZnO Films
Optoelectronic properties of Al-Er co-doped ZnO films and electroluminescent devices deposited by magnetron sputtering with various oxygen contents were investigated.Experimental results exhibit that the increase of oxygen content leads to the enhancement of the optical activity of Er3+ ions and diminishes electron traps in films.In addition,a high oxygen content causes to a decrease in the crystallinity of films due to the energy loss caused by the collision of spattered particles with oxygen during the deposition.Because oxygen atoms fill the oxygen vacancies that function as donors,npn heterojunction devices,which significantly depend on the concentration of majority carriers,achieve the highest intensity of electroluminescence under pure argon circumstances.
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