Synthesis and Performance Enhancement of Zone-melting N-type Bismuth Telluride Thermoelectric Materials
A series of iodide doped(SbI3,BiI3,TeI4)n-type Bi2Te3-xSex materials was prepared using zone melting methods.It was discovered that iodide doping could stabilize the carrier type,enhance electrical conductivity,and decrease the lattice thermal conductivity.With 0.14 wt%SbI3 doping,0.12 wt%BiI3 doping,and 0.07 wt%TeI4 doping,the maximum ZT values reach 0.85 at 405 K,0.96 at 362 K and 1.05 at 350 K,which are 21%,36%,28%higher than commercial n-type materials,respectively.
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