Electric Transport Properties of YSZ Films Prepared by Pulsed Laser Deposition
The future development trend of oxygen sensors based on YSZ films is the miniaturization and high sensitivity.The key to improve the performance of oxygen sensing sensors is clarifying the transport mechanism of oxygen ions in the film.In this paper,YSZ thin films were prepared on Si(100)substrates by pulsed laser deposition.The effects on the composition,structure and electrical conductivity were studied by XRD,SEM and XPS.The results show that the structure of YSZ films is polycrystalline cubic phase,and the annealing temperature has a significant effect on the properties of YSZ films.The high temperature annealing not only significantly increases the average grain size of the film,but also greatly improves the conductivity of the film.On the other hand,the annealing regulates the element content ratios of Zr,Y and O in the film.When the O content increases,the conductivity of the film decreases.In addition,this study shows that the YSZ film exhibits the ionic conductivity of typical solid electrolyte after high temperature annealing(T≥1073 K).Further,the YSZ film has two temperature inflection points in the range from 313 K to 873 K,indicating that there are three conduction mechanisms.The calculated activation energy of YSZ films at high temperatures is consistent with that reported in the literature.This study provides a theoretical basis for the preparation of YSZ thin films with specific requirements by pulsed laser deposition.
Pulsed laser depositionYSZ filmIon conductionAnnealing temperature
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