室温辐射探测器用CdTe基化合物半导体晶体生长研究进展
Advances in Crystal Growth of CdTe-based Compound Semiconductors for Room Temperature Radiation Detectors
高攀登 1俞鹏飞 1刘文斐 1赵世伟 1韩召1
作者信息
- 1. 长安大学材料科学与工程学院,陕西西安 710064
- 折叠
摘要
CdTe基化合物半导体材料由于具有较宽的带隙、良好的光电性质和电子传输性能,在室温辐射探测领域具有广阔的应用前景.其中CdTe、CdZnTe、CdMnTe和CdMgTe单晶具有优异的载流子传输特性被用作室温X射线和γ射线探测器.本文探讨了CdTe基晶体生长的离子性强,热导率差等难点.介绍了CdTe基晶体的生长方法,并综述了CdTe基晶体在室温辐射探测领域的研究进展.展望了CdTe基晶体的发展方向,为CdTe基化合物半导体晶体材料的应用提供了更丰富的想象空间.
Abstract
CdTe-based compound semiconductor materials have broad application prospects in the field of room-temperature radiation detection because of their wide band gaps,good photoelectric properties and electron transport performance.CdTe,CdZnTe,CdMnTe and CdMgTe single crystals have excellent carrier transport properties and are used as X-ray and γ-ray detectors at room temperature.The difficulties of crystal growth,such as strong ionic property and poor thermal conductivity of CdTe-based crystals,are discussed .The growth methods of CdTe-based crystals were introduced,and the latest research progress in the field of room temperaturer radiation detection was reviewed.Finally,the development direction of CdTe-based crystals was prospected,which provided more imagination space for the applications of CdTe-based compound semiconductor crystal materials.
关键词
CdTe基半导体晶体/物理性质/生长难点/晶体生长方法Key words
CdTe-based semiconductor crystals/Physical properties/Growth difficulty/Crystal growth method引用本文复制引用
基金项目
陕西省重点研发项目(2022GY-358)
中央高校基本科研业务费专项资金项目(300102310204)
出版年
2024
国家科技期刊平台
NSTL
万方数据