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单质铋调控碳缺陷氮化碳光催化降解罗丹明B

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为提升石墨相氮化碳(CN)的光催化性能,利用缺陷工程策略在CN中引入碳空位后,再采用化学还原法制备了单质铋负载的碳缺陷氮化碳(Bi-V-CN),分别采用XRD、SEM、XRD、FTIR、XPS、PL、EIS等检测方法进行了表征分析,并将其应用于罗丹明B(RhB)的光催化降解.研究结果表明,单质铋的引入显著提升了催化剂的可见光响应性能,且在合成时引入硝酸铋的质量分数为0.5%、催化剂质量浓度为1 mg/mL、RhB初始质量浓度为20 mg/L时,光照25 min后,催化剂对RhB的去除率达到99.7%.单质铋和碳缺陷的引入不仅增加了CN的比表面积,为催化反应提供了更多的活性位点,同时还减小了CN的禁带宽度,促进了光生电子和空穴的有效分离,从而达到提升材料光催化活性的目的.活性物种淬灭实验结果表明,h+和·O2-是Bi-V-CN在光催化降解RhB过程中的主要活性物种.
Photocatalytic degradation of rhodamine B by carbon-deficient carbon nitride controlled by elemental bismuth
In order to enhance the photocatalytic performance of graphite phase carbon nitride(CN),the carbon-deficient carbon nitride controlled by elemental bismuth(Bi-V-CN)was synthesized by chemical reduction method after introducing carbon vacancies into CN using defect engineering.And the composite was characterized by XRD、SEM、XRD、FTIR、XPS、PL and EIS.Bi-V-CN was synthesized for photocatalytic degradation of rhodamine B(RhB).The visible light response of the catalyst was improved greatly after the introduction of elemental bismuth.When the mass fraction of bismuth nitrate introduced was 0.5%,the removal rate of RhB reached 99.7%after 25 min of irradiation with dosage of 1 mg/mL under the condition of 20 mg/L RhB.The introduction of bismuth and carbon defects not only increased the specific surface area of CN,provided more active site for photocatalytic reaction,but also reduced the band gap of CN,promoted the effective separation of photogenerated electrons and holes,so as to improve the photocatalytic performance of CN.The quenching experiments of active species showed that h+and·O2-were the main active species in the catalytic degradation of Bi-V-CN,respectively.

carbon nitridebismuth loadingcarbon defectsphotocatalysisrhodamine B

石姝彤、郑帅、叶小兰、谢亮、吴隽玮、孙鑫格、曾玉彬

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武汉大学动力与机械学院,武汉 430072

中油(新疆)石油工程有限公司,新疆克拉玛依 834000

武汉理工大学材料科学与工程学院,武汉 430072

中国石油工程建设公司西南分公司,成都 610000

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氮化碳 铋负载 碳缺陷 光催化 罗丹明B

国家自然科学基金资助项目2022年度新疆维吾尔自治区科学技术厅天山英才计划

U22A201932022TSYCJC0002

2024

材料科学与工艺
中国材料研究学会 哈尔滨工业大学

材料科学与工艺

CSTPCD北大核心
影响因子:0.491
ISSN:1005-0299
年,卷(期):2024.32(5)