Bismuth oxyselenide is an emerging two-dimensional semiconductor material that has the characteristics of high carrier mobility,excellent thermal and chemical stability and good mechanical flexibility.It has broad application prospects in optoelectronics,energy storage and other fields.However,at present,the synthesis of two-dimensional bismuth oxyselenide films generally adopts bottom-up or top-down methods.The acquisition of two-dimensional bismuth oxyselenide single crystals with large size and atomic thickness and the efficient transfer of films are still key issues that need to be further studied in the preparation process.This paper reviews the preparation methods of two-dimensional bismuth oxyselenide materials at home and abroad.Meanwhile,it also discusses the advantages and disadvantages of each method and the improvements from the aspects of precursors and reaction conditions,so as to provide a reference for the efficient and controllable preparation of high-performance bismuth oxyselenide materials with specific morphology and sizes in the future.
关键词
硒氧化铋/二维材料/生长调控/超薄单晶/制备方法
Key words
bismuth oxyselenide/two-dimensional materials/growth regulation/ultrathin single crystal/prep-aration method
维普
万方数据