首页|Field emission from Si tips coated with nanocrystalline diamond films

Field emission from Si tips coated with nanocrystalline diamond films

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The electron field emission from Si tips coated with nanocrystalline diamond films was investigated. The Si tips were formed by plasma etching, and nano-diamond films were deposited on the Si tips by hot filament chemical vapor deposition. The radius of curvature for the Si tips was averagely about 50 nm. The microstructure of the diamond films was examined by scanning electron microscopy and Raman spectroscopy. The field emission properties of the samples were measured in an ionpumped vacuum chamber at a pressure of 10-6 Pa. The experimental results showed that the nanostructured films on Si tips exhibited a lower value of the turn-on electric field than those on flat Si substrates. It was found that the tip shape and nondiamond phase in the films had a significant effect on the field emission properties of the films.

nanocrystalline diamondfield emissionSi tipsCVD, diamond films

WANG Wanlu、Liao Kejun、LIU Gaobin、MA Yong

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College of mathematics and Sciences, Chongqing University, Chongqing 400044, P.R.China

国家自然科学基金

s:50005027,50345021and19904016

2003

重庆大学学报(英文版)
重庆大学

重庆大学学报(英文版)

影响因子:0.02
ISSN:1671-8224
年,卷(期):2003.2(2)
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