Molecular dynamics study on the limited etching width on gold surface by focused ion beam
To gain a better understanding of the interaction between energetic particles and materials,this study conducted molecular dynamics simulations to investigate the limiting etching width of Au surfaces irradiated by Ga ions with an energy of 30 keV.Using a strictly focused ion beam,the structural characteristics and kinetic process of system of irradiated Au(111)surface has been obtained.The results indicate that both atomic sputtering and redeposition play a role in the etching process.In the initial stage of irradiation,the etching of the shallow surface is primarily controlled by surface atomic sputtering,with a limiting etching width of 8 nm.However,as the etching depth increases,the etching width is increased by the sputtering of the inner wall of the etching groove,resulting in an average etching width of the surface of 12 nm,and reaching up to 17 nm in some areas.These findings are of great significance for the experimental research,such as the scale control of ion beam fine nanomachining and the radiation damage of aerospace devices and nuclear reactor wall materials.This study has gained profound insights into the microscopic mechanisms underlying particle-material interactions while offering crucial theoretical support for experimental design.
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