Effect of silicon substrate temperature on properties of Ti films prepared by electron beam evaporation
Ti films were prepared on surface of silicon substrate by means of electron beam evapora-tion.The thickness,surface roughness,specular reflectance,square resistance,and residual stress of Ti films obtained at different silicon substrate temperature were analyzed by step profiler,atomic force microscope,reflectivity tester,four probe resistance tester,and stress tester,respectively.The results showed that the thickness,square resistance,and residual stress of Ti films are decreased gradually with the increasing of silicon substrate temperature from 25℃to 200℃.The surface roughness de-creases first and then increases while the specular reflectance increases first and then decreases with the increasing of silicon substrate temperature.
electron beam evaporationsilicon substrate temperaturetitanium filmsquare resis-tanceresidual stresssurface roughnessspecular reflectance