首页|巯基吡啶异构体对电镀铜填盲孔的影响研究

巯基吡啶异构体对电镀铜填盲孔的影响研究

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本文以同分异构体2-巯基吡啶(2-MP)和4-巯基吡啶(4-MP)为研究对象,在对比其作为整平剂填充盲孔性能差异的基础上,阐述其分子构效关系.首先,通过哈林槽镀铜实验研究了 2-MP与4-MP的填盲孔性能,结果表明,2-MP的填孔性能更佳,其填孔率可达82%.之后,通过量子化学计算,发现2-MP分子中S原子电子云密度低于4-MP,这说明2-MP更易吸附在铜表面.计时电位法测试结果表明:Cl-可促进2-MP在铜表面的吸附,此外,2-MP与PEG之间的相互作用显著强于4-MP.最后,通过X射线光电子能谱(XPS)检测到了 Cu-S键的存在,证明两种整平剂分子在铜表面均发生了化学吸附.然而,由于2-MP分子中的巯基S原子与N原子处于邻位,可以形成S-Cu2+-N配合物,进而与Cl-、PEG形成复杂且致密的抑制层,强烈抑制表面铜沉积,从而提高了其盲孔填孔率.
Study on the influence of pyrithione isomers on filling blind holes in electroplated copper
The study focused on the isomers 2-mercaptopyridine(2-MP)and 4-mercaptopyridine(4-MP),comparing their performance as levelers in filling blind holes.Copper plating experiments in a Hull cell initially investigated the blind hole filling capabilities of 2-MP and 4-MP.The results indicated superior performance by 2-MP,achieving a filling rate of up to 82%.Quantum chemical calculations later revealed a lower electron cloud density of the sulfur atom in the 2-MP molecule than in 4-MP.This suggests a higher likelihood of 2-MP adsorbing onto the copper surface.Chronopotentiometric measurements showed that Cl-can promote the adsorption of 2-MP on the copper surface.Furthermore,the interaction between 2-MP and PEG was significantly stronger than that of 4-MP.X-ray photoelectron spectroscopy(XPS)detected the existence of Cu-S bonds in the final stage,proving chemical adsorption of both levelers onto the copper surface.Nevertheless,the proximity of the mercapto S atom and N atom in the 2-MP molecule allows for the formation of a S-Cu2+-N complex.This complex,in combination with Cl-and PEG,creates a complex and dense inhibition layer.This layer strongly suppresses surface copper deposition,thereby enhancing the blind hole filling rate of 2-MP.

copper electroplatingfilling blind holeslevelers2-mercaptopyridine4-mercaptopyridin

陈洁、宗高亮、代禹涵、赵晓楠、肖宁

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北京化工大学化学工程学院,北京 100029

深圳市板明科技股份有限公司,广东深圳 518105

电镀铜 填充盲孔 整平剂 2-巯基吡啶 4-巯基吡啶

国家自然科学基金青年基金

21902010

2024

电镀与精饰
天津市电镀工程学会

电镀与精饰

CSTPCD北大核心
影响因子:0.522
ISSN:1001-3849
年,卷(期):2024.46(9)